Properties of AgInSe2 films grown by magnetron sputtering

n-Type AgInSe2 films 0.5 to 0.9 mu m thick were grown by dc magnetron sputtering. As targets, we used AgInSe2 crystals grown by a modified Bridgman process using high-purity precursors. The crystal structure, morphology, electrical conductivity, and Hall coefficient of the films were studied at various temperatures. We determined the optimal growth and annealing temperatures of the films (500 and 250A degrees C, respectively). Using structures based on the films, we obtained the spectral dependences of their photoresponse, established the nature of interband transitions in the films, and evaluated their band gap. The ability to vary electrical and optical properties with no changes in stoichiometry is of interest for concentrated solar power applications.