Nonequilibrium spectroscopy of inter-and intraband transitions in quantum dot structures

被引：0

作者：

Vorobjev, LE

Glukhovskoy, AV

Danilov, SN

Panevin, VY

Firsov, DA

Fedosov, NK

Shalygin, VA

Andreev, AD

Volovik, BV

Ledentsov, NN

Livshits, DA

Ustinov, VM

Tsatsul'nikov, AF

Shernyakov, YM

Grundmann, M

Weber, A

Fossard, F

Julien, FH

机构：

[1] St Petersburg State Tech Univ, St Petersburg 195251, Russia

[2] RAS, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[3] Univ Leipzig, Inst Expt Phys 2, D-04103 Leipzig, Germany

[4] Univ Paris 11, Inst Elect Fondamentale, F-91405 Orsay, France

来源：

ULTRAFAST PHENOMENA IN SEMICONDUCTORS 2001 | 2002年 / 384-3卷

关键词：

quantum dots; photoinduced absorption and emission; fourier transform spectrometry;

D O I：

10.4028/www.scientific.net/MSF.384-385.39

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Results for interband and intraband absorption and emission in quantum dot structures are presented. The observed peaks correspond to interband electron transitions between ground and excited states of QDs. Near infrared (lambda approximate to 1mum) lasing was obtained at high intensities of excitation Surface mid infrared (lambda > 10 mum) photoluminescence connected with the intraband electron transitions between the states of wetting layer and the ground states in QDs was also studied.

引用

页码：39 / 42

页数：4

共 7 条

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