Investigation on the relationship between the properties of atomic layer deposition ZnO film and the dose of precursor

被引：0

作者：

Dong Ya-Bin ^{[1
]}

Xia Yang ^{[1
]}

Li Chao-Bo ^{[1
]}

Lu Wei-Er ^{[1
]}

Rao Zhi-Peng ^{[1
]}

Zhang Yang ^{[1
]}

Zhang Xiang ^{[1
]}

Ye Tian-Chun ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China

来源：

ACTA PHYSICA SINICA | 2013年 / 62卷 / 14期

关键词：

ZnO; atomic layer deposition; Zn/O; TEMPERATURE;

D O I：

10.7498/aps.62.147306

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In this paper, we present the properties of new type of material ZnO and the ZnO films prepared on sapphire substrate through atomic layer deposition (ALD). In experiment, we use N-2 as the carrier, DEZn and DI-water as the precursors. The deposition temperature is 180 degrees C. The value of Zn/O could be modified through changing the dose of DEZn. Furthermore, we investigate the influences of Zn/O value on the thickness, growth rate, crystalline property, surface morphology, three-dimensional structure and roughness of the ZnO film prepared by the ALD method.

引用

页数：9

共 18 条

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