Co-doping of sulfur and boron in CVD-diamond

被引：27

作者：

Li, RB ^{[1
]}

Hu, XJ ^{[1
]}

Shen, HS ^{[1
]}

He, XC ^{[1
]}

机构：

[1] Shanghai Jiao Tong Univ, State Key Lab MMCMs, Dept Mat Sci, Shanghai 200030, Peoples R China

来源：

MATERIALS LETTERS | 2004年 / 58卷 / 12-13期

关键词：

co-doping; diamond; chemical vapour deposition; thin films;

D O I：

10.1016/j.matlet.2003.11.015

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Diamond films had been grown by microwave plasma-assisted CVD using acetone diluted in hydrogen. Sulfur incorporation in diamond was achieved by co-doping method using dimethyl disulfide and boron dioxide. Structural and compositional characterization of the as-grown films was carried out by scanning electron microscopy (SEM), Raman spectrum, auger electron spectrometer (AES) and particle-induced X-ray emission (PIXE). AES and PIXE analyses confirmed that the sulfur was successfully introduced into diamond films. N-type conduction of the films was confirmed by Seebeck-effect measurements. The donor activity of the sulfur decreased from 0.52 to 0.39 eV with increasing of S incorporation into diamond. Results indicated that boron facilitated the sulfur into diamond via co-doping method. (C) 2004 Elsevier B.V All rights reserved.

引用

页码：1835 / 1838

页数：4

共 18 条

[1] Molecular-orbital theory of monatomic and diatomic substitutional defects as shallow n-type dopants in diamond [J].

Anderson, AB ;

Grantscharova, EJ ;

Angus, JC .

PHYSICAL REVIEW B, 1996, 54 (20) :14341-14348

[2] Synthesis and characterization of highly-conducting nitrogen-doped ultrananocrystalline diamond films [J].

Bhattacharyya, S ;

Auciello, O ;

Birrell, J ;

Carlisle, JA ;

Curtiss, LA ;

Goyette, AN ;

Gruen, DM ;

Krauss, AR ;

Schlueter, J ;

Sumant, A ;

Zapol, P .

APPLIED PHYSICS LETTERS, 2001, 79 (10) :1441-1443

[3]

EATON SC, 2001, DIAMOND MAT, V7

[4] Electron field emission from sulfur-incorporated nanocrystalline carbon thin films [J].

Gupta, S ;

Weiss, BL ;

Weiner, BR ;

Morell, G .

APPLIED PHYSICS LETTERS, 2001, 79 (21) :3446-3448

[5] n-type control by sulfur ion implantation in homoepitaxial diamond films grown by chemical vapor deposition [J].

Hasegawa, M ;

Takeuchi, D ;

Yamanaka, S ;

Ogura, M ;

Watanabe, H ;

Kobayashi, N ;

Okushi, H ;

Kajimura, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (12B) :L1519-L1522

[6] Effect of N and B doping on the growth of CVD diamond (100):H(2x1) surfaces [J].

Kaukonen, M ;

Sitch, PK ;

Jungnickel, G ;

Nieminen, RM ;

Poykko, S ;

Porezag, D ;

Frauenheim, T .

PHYSICAL REVIEW B, 1998, 57 (16) :9965-9970

[7]

KOBASHI K, 1988, J MATER SCI, V23, P842

[8] Growth and characterization of phosphorus doped n-type diamond thin films [J].

Koizumi, S ;

Kamo, M ;

Sato, Y ;

Mita, S ;

Sawabe, A ;

Reznik, A ;

Uzan-Saguy, C ;

Kalish, R .

[9] Phosphorus-doped chemical vapor deposition of diamond [J].

Koizumi, S ;

Teraji, T ;

Kanda, H .

[10] Impedance studies of boron-doped CVD diamond electrodes [J].

Latto, MN ;

Riley, DJ ;

May, PW .

← 1 2 →