The influence of residual strain on Raman scattering in InxGa1-xAs single crystals

被引：20

作者：

Islam, MR

Verma, P

Yamada, A ^{[1
]}

Kodama, S

Hanaue, Y

Kinoshita, K

机构：

[1] Kyoto Inst Technol, Dept Elect & Informat Sci, Kyoto 6068585, Japan

[2] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

[3] Natl Space Dev Agcy Japan, Tsukuba, Ibaraki 3058505, Japan

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2002年 / 91卷

关键词：

residual strain; Raman scattering; InGaAs bulk crystal;

D O I：

10.1016/S0921-5107(01)00972-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Micro-Raman scattering studies were performed on bulk InxGa1-xAs single crystal grown by the two-step multi-component zone melting method, with the aim to understand the influence of residual strain on the shifts in phonon frequencies in Raman spectra. It is observed that the LOGaAs phonon frequency is varied for various measurement points, which may be related to the compositional variation in the samples. However, it is found from precise micro-Raman measurements both in a corner region and in a chipped region that there exists a large amount of residual strain in the samples. By comparing the observed LOGaAs phonon frequencies with those estimated from the compositions determined by the energy dispersive X-ray analysis, they are found to be shifted by about 9.5 cm(-1) due to residual strain, which corresponds to a strain value of the order of 10(-2). (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：66 / 69

页数：4

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