Low Temperature Surface Passivation of Black Silicon Solar Cells by High-Pressure O2 Thermal Oxidation

被引：5

作者：

Liu, W. F. ^{[1
,2
]}

Bian, J. M. ^{[1
,3
]}

Zhao, Z. C. ^{[1
]}

Luo, Y. L. ^{[1
]}

Yuan, Z. ^{[2
]}

Zhang, B. Y. ^{[1
]}

Liu, A. M. ^{[1
,2
]}

机构：

[1] Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China

[2] Jinzhou Yangguang Energy Co Ltd, Solar Energy Res & Dev Ctr, Jinzhou 121001, Peoples R China

[3] Chinese Acad Sci, Key Lab Inorgan Coating Mat, Shanghai 200050, Peoples R China

来源：

ECS SOLID STATE LETTERS | 2013年 / 2卷 / 04期

关键词：

NANOWIRE ARRAYS;

D O I：

10.1149/2.003304ssl

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A simple low temperature surface passivation method based on high pressure O-2 thermal oxidation was proposed for black silicon solar cells. With this method, the nanowire textured surface of the black silicon solar cells can be effectively passivated at an extremely low temperature of similar to 450 degrees C, and a better performance was achieved compared with that treated with the conventional high temperature surface passivation. The corresponding mechanism was discussed based on current-voltage characteristics and external quantum efficiency measurements. Results demonstrate that the adverse effects associated with high temperature surface passivation can be effectively suppressed by this low temperature surface passivation process. (C) 2013 The Electrochemical Society.

引用

页码：Q17 / Q20

页数：4

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