Direct observation of anti-phase boundaries in heteroepitaxy of GaSb thin films grown on Si(001) by transmission electron microscopy

被引：9

作者：

Woo, S. Y. ^{[1
,2
,3
]}

Vajargah, S. Hosseini ^{[1
,2
,3
]}

Ghanad-Tavakoli, S. ^{[4
]}

Kleiman, R. N. ^{[3
,4
,5
]}

Botton, G. A. ^{[1
,2
,3
]}

机构：

[1] McMaster Univ, Dept Mat Sci & Engn, Hamilton, ON L8S 4L7, Canada

[2] McMaster Univ, Canadian Ctr Electron Microscopy, Hamilton, ON L8S 4L7, Canada

[3] McMaster Univ, Brockhouse Inst Mat Res, Hamilton, ON L8S 4M1, Canada

[4] McMaster Univ, Ctr Emerging Device Technol, Hamilton, ON L8S 4L7, Canada

[5] McMaster Univ, Dept Engn Phys, Hamilton, ON L8S 4L7, Canada

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 112卷 / 07期

基金：

加拿大自然科学与工程研究理事会;

关键词：

MOLECULAR-BEAM EPITAXY; SELF-ANNIHILATION; STRUCTURAL-PROPERTIES; DOMAIN BOUNDARIES; GAAS; SI; GE; SILICON; HETEROSTRUCTURES; DIFFRACTION;

D O I：

10.1063/1.4756957

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Unambiguous identification of anti-phase boundaries (APBs) in heteroepitaxial films of GaSb grown on Si has been so far elusive. In this work, we present conventional transmission electron microscopy (TEM) diffraction contrast imaging using superlattice reflections, in conjunction with convergent beam electron diffraction analysis, to determine a change in polarity across APBs in order to confirm the presence of anti-phase disorder. In-depth analysis of anti-phase disorder is further supported with atomic resolution high-angle annular dark-field scanning transmission electron microscopy. The nature of APBs in GaSb is further elucidated by a comparison to previous results for GaAs epilayers grown on Si. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4756957]

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