Design and majorization of SOI high temperature pressure sensor

In high temperature harsh environments, The real-time dynamic measurements of pressure sensors are unable to carry out due to its own limitation. Thus, SOI material and MEMS processing technology are used to solve these problems. Mechanical properties stability and reliability of the sensor structure with SOI are much improved. The new high temperature pressure sensor proposed in this paper, was been studied by means of theory and simulations. The main problem, the reverse of PN junction, caused by the intrinsic excitation of the semiconductor in high temperature, was solved using the silicon on insulator (SOI) material. Then the stability and reliability of the mechanical structure of the sensitive head is guaranteed with the Micro-electromechanical system (MEMS) fabrication process. Using high temperature metal materials as the metal wire material, the package of the pressure sensor can withstand high temperature in harsh environments. The stability and sensitivity of our pressure sensors are much improved in high temperature harsh environment. By ueing the designing principles of high temperature pressure sensors, together with theoretics and simulations, optimism designs were worked out for various parts of sensors for harsh environments. Performance parameters and maximum operation temperatures of SOI high temperature pressure sesors studied in this paper were obtained according to test results. This work provides insights for the design of sensors that can stand for even higher temperatures.