Aluminium/gallium, indium/gallium, and aluminium/indium co-doped ZnO thin films deposited via aerosol assisted CVD

被引：81

作者：

Potter, Dominic B. ^{[1
]}

Powell, Michael J. ^{[1
]}

Parkin, Ivan P. ^{[1
]}

Carmalt, Claire J. ^{[1
]}

机构：

[1] UCL, Dept Chem, Mat Chem Ctr, 20 Gordon St, London WC1H 0AJ, England

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2018年 / 6卷 / 03期

基金：

英国工程与自然科学研究理事会;

关键词：

CHEMICAL-VAPOR-DEPOSITION; TRANSPARENT CONDUCTING OXIDES; ZINC-OXIDE; ELECTRICAL-PROPERTIES; SUBSTRATE-TEMPERATURE; PHYSICAL-PROPERTIES; OPTICAL-PROPERTIES; CARRIER TRANSPORT; GALLIUM; INDIUM;

D O I：

10.1039/c7tc04003b

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Aluminium/gallium co-doped ZnO (AGZO), indium/gallium co-doped ZnO (IGZO), and aluminium/indium co-doped ZnO (AIZO) thin films were synthesised on glass substrates via aerosol assisted chemical vapour deposition (AACVD). The films were fully characterised by X-ray diffraction, X-ray photoelectron spectroscopy and scanning electron microscopy. The optoelectronic properties of the films were determined using UV/vis spectroscopy and Hall effect measurements. The AGZO film displayed the lowest resistivity (1.3 x 10(-2) Omega cm) and highest carrier mobility (7.9 cm(2) V-1 s(-1)), due the relatively low amount of disorder in the structure. The incorporation of In3+ resulted in the most disorder in the structure due to its large radius, which led to an increase in optical absorption, and a decrease in resistivity.

引用

页码：588 / 597

页数：10

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