Highly ordered catalyst-free and mask-free GaN nanorods on r-plane sapphire

被引：28

作者：

Aschenbrenner, T. ^{[1
]}

Kruse, C. ^{[1
]}

Kunert, G. ^{[1
]}

Figge, S. ^{[1
]}

Sebald, K. ^{[1
]}

Kalden, J. ^{[1
]}

Voss, T. ^{[1
]}

Gutowski, J. ^{[1
]}

Hommel, D. ^{[1
]}

机构：

[1] Univ Bremen, Inst Solid State Phys, D-28359 Bremen, Germany

来源：

NANOTECHNOLOGY | 2009年 / 20卷 / 07期

关键词：

CHEMICAL-VAPOR-DEPOSITION; MOLECULAR-BEAM EPITAXY; OPTICAL-PROPERTIES; MBE-GROWTH; NANOWIRES; DIODES;

D O I：

10.1088/0957-4484/20/7/075604

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Self-organized and highly ordered GaN nanorods were grown without catalyst on r-plane sapphire using a combination of molecular beam epitaxy and metal-organic vapor-phase epitaxy. AlN nucleation centers for the nanorods were prepared by nitridation of the sapphire in a metal-organic vapor-phase epitaxy reactor, while the nanorods were grown by molecular beam epitaxy. A coalesced two-dimensional GaN layer was observed between the nanorods. The nanorods are inclined by 62 degrees towards the +/-[1 (1) over bar 00]-directions of the a-plane GaN layer. The high degree of ordering and the structural perfection were confirmed by micro-photoluminescence measurements.

引用

页数：5

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