Power devices for high voltage integrated circuits: New device and technology concepts

被引：5

作者：

Amaratunga, G ^{[1
]}

Udrea, F ^{[1
]}

机构：

[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

来源：

2001 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOL 1 & 2, PROCEEDINGS | 2001年

关键词：

D O I：

10.1109/SMICND.2001.967503

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Power electronic devices and power integrated circuits will play a crucial role in increasing the efficiency with which electric power is consumed. This paper is concerned with recent trends in high voltage devices for integrated circuits and prospective industrial applications of high voltage power integrated circuits. New device concepts are explored in comparison with classical LDMOSFETs and LIGBTs. Alternative technologies to the conventional junction-isolation technology, such as High Voltage SOI technology are also briefly analysed.

引用

页码：441 / 448

页数：8

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