Biaxial strain tuning of interlayer excitons in bilayer MoS2

被引：29

作者：

Carrascoso, Felix ^{[1
]}

Lin, Der-Yuh ^{[2
]}

Frisenda, Riccardo ^{[1
]}

Castellanos-Gomez, Andres ^{[1
]}

机构：

[1] CSIC, ICMM, Mat Sci Factory, Sor Juana Ines de la Cruz 3, E-28049 Madrid, Spain

[2] Natl Changhua Univ Educ, Bao Shan Campus 2,Shi Da Rd, Changhua 500, Taiwan

来源：

JOURNAL OF PHYSICS-MATERIALS | 2020年 / 3卷 / 01期

基金：

欧洲研究理事会;

关键词：

2D materials; molybdenum disulfide (MoS2); interlayer exciton; strain engineering; bilayer; VALLEY POLARIZATION; MONOLAYER; ABSORPTION; THICKNESS;

D O I：

10.1088/2515-7639/ab4432

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We show how the excitonic features of biaxial MoS2 flakes are very sensitive to biaxial strain. We find a lower bound for the gauge factors of the A exciton and B exciton of (-41 2) meV/% and (-45 2) meV/% respectively, which are larger than those found for single-layer MoS2. Interestingly, the interlayer exciton feature also shifts upon biaxial strain but with a gauge factor that is systematically larger than that found for the A exciton, (-48 4) meV/%. We attribute this larger gauge factor for the interlayer exciton to the strain tunable van der Waals interaction due to the Poisson effect (the interlayer distance changes upon biaxial strain).

引用

页数：5

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