Enhanced Coupling Strength Grating Out-Couplers in III-V Waveguides

被引：0

作者：

Evans, Gary A. ^{[1
]}

Butler, Jerome K. ^{[1
]}

He, Ruo-Hua ^{[1
]}

Kirk, Jay B. ^{[1
]}

Yao, Jin ^{[2
]}

Zheng, Xuezhe ^{[2
]}

Krishnamoorthy, Ashok V. ^{[2
]}

机构：

[1] Southern Methodist Univ, Dept Elect Engn, Sch Engn, Dallas, TX 75275 USA

[2] Oracle, Networking Grp, San Diego, CA 92129 USA

来源：

2016 INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC) | 2016年

基金：

美国国家科学基金会;

关键词：

DBR; DFB; ECS; Floquet-Bloch; grating outcoupler; semiconductor laser; silicon photonics; III-V waveguides;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A thin, low-index liner layer and a high-index cover layer over a surface grating in a III-V waveguide theoretically increases the outcoupling efficiency by one or two orders of magnitude. The liner and cover layer also reduces losses between waveguide components such as distributed feedback (DBR) or grating out-coupler region.

引用

页数：2