Silicon surface passivation by Al2O3: Recombination parameters and inversion layer solar cells

被引：22
作者：
Werner, F. [1 ]
Cosceev, A. [2 ]
Schmidt, J. [1 ]
机构：
[1] Inst Solar Energy Res Hamelin ISFH, Ohrberg 1, D-31860 Emmerthal, Germany
[2] Leibniz Univ Hannover, Inst Elect Mat & Devices, D-30167 Hannover, NH, Germany
来源：
PROCEEDINGS OF THE 2ND INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2012) | 2012年 / 27卷
关键词：
passivation; aluminum oxide; capture cross section; inversion layer solar cell; SI-SIO2; INTERFACE;
D O I：
10.1016/j.egypro.2012.07.070
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The interface between p- and n-type FZ-Si and an amorphous aluminum oxide (Al2O3) surface passivation layer deposited by plasma-assisted atomic layer deposition (ALD) was investigated by frequency-dependent conductance measurements. The hole capture cross section in the lower half of the bandgap, sigma(p) = (4 +/- 3)x10(-16) cm(2), was found to be independent of energy. The electron capture cross section n in the upper half of the bandgap decreases from sigma(n) = (7 +/- 4)x10(-15) cm(2) at midgap over two orders of magnitude towards the conduction band edge. Numerical simulations of the effective surface recombination velocity based on these recombination parameters show a good agreement with experimental surface recombination velocities for a wide range of excess carrier and surface charge densities. Carrier transport in the inversion layer formed at the n-Si/Al2O3 interface was investigated yielding a sheet resistance of 15 k Omega/square, which was reduced to 6 k Omega/square for a surface charge density of -2x10(13) cm(-2) obtained by corona charging. The applicability of Al2O3 inversion layers as emitters in n-type inversion layer solar cells was demonstrated by short circuit current densities of up to 25 mA/cm(2), which show a pronounced dependence on surface charge density. (C) 2012 Published by Elsevier Ltd. Selection and peer-review under responsibility of the scientific committee of the SiliconPV 2012 conference.
引用
收藏
页码：319 / 324
页数：6
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