Two-step growth of high quality Bi2Te3 thin films on Al2O3 (0001) by molecular beam epitaxy

被引：118

作者：

Harrison, S. E. ^{[1
]}

Li, S. ^{[2
]}

Huo, Y. ^{[1
]}

Zhou, B. ^{[2
,3
,4
]}

Chen, Y. L. ^{[2
,3
,4
]}

Harris, J. S. ^{[1
]}

机构：

[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[2] Stanford Univ, Dept Phys, Stanford, CA 94305 USA

[3] Univ Oxford, Dept Phys, Oxford OX1 3PU, England

[4] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 17期

关键词：

TOPOLOGICAL INSULATOR; ELECTRONIC-STRUCTURE; BISMUTH TELLURIDE; BI2SE3; SI(111); SURFACE; MBE;

D O I：

10.1063/1.4803717

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Large-area topological insulator Bi2Te3 thin films were grown on Al2O3 (0001) using a two-temperature step molecular beam epitaxy growth process. By depositing a low temperature nucleation layer to serve as a template for high temperature epitaxial film growth, a high quality terrace-step surface morphology with a significant reduction in three-dimensional defect structures was achieved. X-ray diffraction measurements indicate that high crystalline quality Bi2Te3 layers were grown incoherently by van der Waals epitaxy using this technique. Angle resolved photoemission spectroscopy measurements verified the integrity of this growth method by confirming the presence of metallic surface states on cleaved two-step Bi2Te3 samples. (C) 2013 AIP Publishing LLC.

引用

页数：4

共 34 条

[1] Sb2Te3 and Bi2Te3 Thin Films Grown by Room-Temperature MBE [J].

Aabdin, Z. ;

Peranio, N. ;

Winkler, M. ;

Bessas, D. ;

Koenig, J. ;

Hermann, R. P. ;

Boettner, H. ;

Eibl, O. .

JOURNAL OF ELECTRONIC MATERIALS, 2012, 41 (06) :1493-1497

[2] Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface [J].

Bansal, Namrata ;

Kim, Yong Seung ;

Edrey, Eliav ;

Brahlek, Matthew ;

Horibe, Yoichi ;

IidaD, Keiko ;

Tanimura, Makoto ;

Li, Guo-Hong ;

Feng, Tian ;

Lee, Hang-Dong ;

Gustafsson, Torgny ;

Andrei, Eva Y. ;

Oh, Seongshik .

THIN SOLID FILMS, 2011, 520 (01) :224-229

[3] Mode of Growth of Ultrathin Topological Insulator Bi2Te3 Films on Si (111) Substrates [J].

Borisova, Svetlana ;

Krumrain, Julian ;

Luysberg, Martina ;

Mussler, Gregor ;

Gruetzmacher, Detlev .

CRYSTAL GROWTH & DESIGN, 2012, 12 (12) :6098-6103

[4] Topological insulator Bi2Te3 films synthesized by metal organic chemical vapor deposition [J].

Cao, Helin ;

Venkatasubramanian, Rama ;

Liu, Chang ;

Pierce, Jonathan ;

Yang, Haoran ;

Hasan, M. Zahid ;

Wu, Yue ;

Chen, Yong P. .

APPLIED PHYSICS LETTERS, 2012, 101 (16)

[5] STRUCTURAL AND ELECTRICAL-PROPERTIES OF BISMUTH TELLURIDE FILMS GROWN BY THE MOLECULAR-BEAM TECHNIQUE [J].

CHARLES, E ;

GROUBERT, E ;

BOYER, A .

JOURNAL OF MATERIALS SCIENCE LETTERS, 1988, 7 (06) :575-577

[6] Molecular Beam Epitaxial Growth of Topological Insulators [J].

Chen, Xi ;

Ma, Xu-Cun ;

He, Ke ;

Jia, Jin-Feng ;

Xue, Qi-Kun .

ADVANCED MATERIALS, 2011, 23 (09) :1162-1165

[7] Experimental Realization of a Three-Dimensional Topological Insulator, Bi2Te3 [J].

Chen, Y. L. ;

Analytis, J. G. ;

Chu, J. -H. ;

Liu, Z. K. ;

Mo, S. -K. ;

Qi, X. L. ;

Zhang, H. J. ;

Lu, D. H. ;

Dai, X. ;

Fang, Z. ;

Zhang, S. C. ;

Fisher, I. R. ;

Hussain, Z. ;

Shen, Z. -X. .

SCIENCE, 2009, 325 (5937) :178-181

[8]

Chen Y.P., 2012, Proceedings of the SPIE, V8373, p83730B

[9] Antisite defects of Bi2Te3 thin films [J].

Cho, SL ;

Kim, Y ;

DiVenere, A ;

Wong, GK ;

Ketterson, JB ;

Meyer, JR .

APPLIED PHYSICS LETTERS, 1999, 75 (10) :1401-1403

[10] Enhanced thermoelectric performance in three-dimensional superlattice of topological insulator thin films [J].

Fan, Zheyong ;

Zheng, Jiansen ;

Wang, Hui-Qiong ;

Zheng, Jin-Cheng .

NANOSCALE RESEARCH LETTERS, 2012, 7

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