Effects of Ce doping on the properties of ZnO thin films prepared by DC reactive magnetron sputtering

被引：4
|
作者：
Luo, Qing [1 ]
Wang, Lai-Sen [1 ]
Wang, Zhen-Wei [1 ]
Chen, Yuanzhi [1 ]
Yue, Guang-Hui [1 ]
Peng, Dong-Liang [1 ]
机构：
[1] Xiamen Univ, Coll Mat, Dept Mat Sci & Engn, Xiamen 361005, Peoples R China
来源：
NEW MATERIALS AND PROCESSES, PTS 1-3 | 2012年 / 476-478卷
关键词：
ZnO:Ce; thin films; DC reactive magnetron sputtering; photoluminescence (PL);
D O I：
10.4028/www.scientific.net/AMR.476-478.2403
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The ZnO and ZnO:Ce thin films were prepared by DC reactive magnetron sputtering. The structure, surface morphology, optical and photoluminescence properties of ZnO:Ce thin films were investigated. The XRD results indicated that all the samples exhibited a hexagonal wurtzite structure. The surface morphology of the films was sensitive to the Ce concentration. All the films had a higher average transmittance (more than 85%) in the visible region and a strong absorption near the band-edge of ZnO. The photoluminescence properties of the ZnO:Ce thin films were also studied. Blue emissions were observed from the ZnO:Ce thin films. Our results indicated that the photoluminescence properties of ZnO thin films doped with low Ce concentration were related to the intrinsic transition of Ce3+ ions. However, when the Ce concentration increased, Zn-i also played an important role.
引用
收藏
页码：2403 / 2406
页数：4
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