A 3OnW Process-and-Voltage Invariant Proportional-to-Absolute Temperature Current Reference

被引：0
|
作者：
Han, Peiqing [1 ,2 ]
Mei, Niansong [1 ]
Zhang, Zhaofeng [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Adv Res Inst, Shanghai 201210, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
来源：
2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2018年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A MOSFET-only proportional-to-absolute temperature (PTAT) current reference is proposed. The self-cascode MOSFET (SCM) structures are adopted and operating in weak and moderate inversion regions by feedback control of the amplifier. This approach reduces the linearity error and the process variation of output current. The current reference is designed in 0.18grn standard CMOS technology with the active area of 0.011mm(2). The process variation is 1.57% (a/ti) by Monte Carlo simulation. The supply voltage sensitivity is 0.1%/V in range from 0.7V to 1.5V and the power consumption is 30nW under the supply voltage of 0.7V.
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收藏
页码：1051 / 1053
页数：3
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