In the rapidly evolving field of quantum-dot-based microcavity lasers the device characterization is of great importance. In this Letter, we study how information can be obtained from the input/output curve by using a microscopic laser theory for the coupled cavity-quantum-dot system. Semiconductor effects such as a nonlinear source term of spontaneous emission, Pauli blocking, and the absence of complete carrier inversion lead to significant deviations from atomic systems. Especially for pulsed excitation, saturation effects have a tremendous impact on the input/output characteristics and render a simple determination of the spontaneous emission coupling beta impossible.
机构:
Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USAUniv Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
Zhang, LD
Hu, E
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机构:
Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USAUniv Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
机构:
Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USAUniv Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
Zhang, LD
Hu, E
论文数: 0引用数: 0
h-index: 0
机构:
Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USAUniv Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA