Impact of external magnetic field on embedded perpendicular STT-MRAM technology qualified for solder reflow

被引：0

作者：

Wang, Chia-Yu ^{[1
]}

Shih, Meng-Chun ^{[1
]}

Lee, Yung-Huei ^{[1
]}

Wang, Wayne ^{[1
]}

Thomas, Luc ^{[2
]}

Lee, Yuan-Jen ^{[2
]}

Liu, Huanlong ^{[2
]}

Zhu, Jian ^{[2
]}

Jan, Guenole ^{[2
]}

Wang, Allen ^{[2
]}

Zhong, Tom ^{[2
]}

Wang, Po-Kang ^{[2
]}

Lin, Derek ^{[1
]}

Chen, Chia-Hsiang ^{[1
]}

Chang, Chih-Yang ^{[1
]}

Weng, Chih-Hui ^{[1
]}

Chiang, Tien-Wei ^{[1
]}

Shen, Kuei-Hung ^{[1
]}

Gallagher, William J. ^{[1
]}

Chuang, Harry ^{[1
]}

机构：

[1] Taiwan Semicond Mfg Co, 121,Pk Ave 3,Sci Pk, Hsinchu 300, Taiwan

[2] TDK Headway Technol Inc, Milpitas, CA 95035 USA

来源：

2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2017年

关键词：

pSTT-MRAM; reflow; magnetic field resistance;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

External magnetic field resistance under write, read operations for perpendicular STT-MRAM qualified for 260 degrees C solder reflow is comprehensively reported for the first time. We show that the most critical polarization direction is writing from parallel to anti-parallel state with external field opposed to both the final free layer direction and the bottom pinned layer direction. It is also found that free layer failure to switch is the major cause rather than unexpected pinned layer flipping. Furthermore, various key factors including temperature, write condition and MTJ film stack are also studied here. Finally, we demonstrate that a low chip failure rate of 0.001 ppm can be achieved with an ECC scheme for external magnetic fields up to 240 Oe at 85 degrees C.

引用

页数：4

共 6 条

[1] [Anonymous], 2014, S VLSI TECHN VLSI TE
[2] [Anonymous], 2014, JSTD020E
[3] Kittel C., 1963, QUANTUM THEORY SOLID, P360
[4] Shih M. C., 2016, S VLSI TECH, P144
[5] Quantifying data retention of perpendicular spin-transfer-torque magnetic random access memory chips using an effective thermal stability factor method
Thomas, Luc
Jan, Guenole
Le, Son
Wang, Po-Kang
[J]. APPLIED PHYSICS LETTERS, 2015, 106 (16)
[6] Perpendicular spin transfer torque magnetic random access memories with high spin torque efficiency and thermal stability for embedded applications (invited)
Thomas, Luc
Jan, Guenole
Zhu, Jian
Liu, Huanlong
Lee, Yuan-Jen
Le, Son
Tong, Ru-Ying
Pi, Keyu
Wang, Yu-Jen
Shen, Dongna
He, Renren
Haq, Jesmin
Teng, Jeffrey
Lam, Vinh
Huang, Kenlin
Zhong, Tom
Torng, Terry
Wang, Po-Kang
[J]. JOURNAL OF APPLIED PHYSICS, 2014, 115 (17)

← 1 →