Microchip-sized InSb photodiode infrared sensors operating at room temperature

被引：18

作者：

Kuze, N ^{[1
]}

Camargo, EG ^{[1
]}

Ueno, K ^{[1
]}

Kawakami, Y ^{[1
]}

Moriyasu, Y ^{[1
]}

Nagase, K ^{[1
]}

Sato, M ^{[1
]}

Endo, H ^{[1
]}

Ishibashi, K ^{[1
]}

Ozaki, M ^{[1
]}

机构：

[1] Asahi Kasei Corp, Cent R&D Labs, 2-1 Samejima, Fuji, Shizuoka 4168501, Japan

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3 NO 3 | 2006年 / 3卷 / 03期

关键词：

D O I：

10.1002/pssc.200564154

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel microchip-sized InSb photodiode infrared sensor (InSb PDS) operating at room temperature is reported. There is no power consumption on the InSb PDS itself, since it works in photovoltaic mode to output an open-circuit voltage. The InSb PDS has a typical responsivity of 1,900 V/W and an output noise of 0.15 mu V/Hz(1/2). A detectivity (D*) of 2.8x10(8) cmHz(1/2)/W has been obtained at 300 K. The InSb PDS is finally molded with plastic on a Quad Flat Non-leaded (QFN) package, having performance high enough for applications such as mobile electronic equipments, personal computers and consumer electronics. (c) 2006 WILEY-VCH Verlag GmbH & Co KGaA, Weinheim.

引用

页码：431 / +

页数：2

共 7 条

[1] AMBIENT-TEMPERATURE DIODES AND FIELD-EFFECT TRANSISTORS IN INSB/IN1-XALXSB [J].

ASHLEY, T ;

DEAN, AB ;

ELLIOTT, CT ;

MCCONVILLE, CF ;

PRYCE, GJ ;

WHITEHOUSE, CR .

APPLIED PHYSICS LETTERS, 1991, 59 (14) :1761-1763

[2]

Ashley T, 1995, INST PHYS CONF SER, P345

[3]

Johnson AD, 1998, MATER RES SOC SYMP P, V484, P143

[4] 8-13 MU-M INASSB HETEROJUNCTION PHOTODIODE OPERATING AT NEAR ROOM-TEMPERATURE [J].

KIM, JD ;

KIM, S ;

WU, D ;

WOJKOWSKI, J ;

XU, J ;

PIOTROWSKI, J ;

BIGAN, E ;

RAZEGHI, M .

APPLIED PHYSICS LETTERS, 1995, 67 (18) :2645-2647

[5]

KIM JD, 1998, OPTO-ELECTRON REV, V6, P217

[6]

PIOTROWSKI J, 1995, P SOC PHOTO-OPT INS, V2397, P180, DOI 10.1117/12.206868

[7]

RAZEGHI M, 1998, OPTO-ELECTRON REV, V6, P155

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