Pressureless sintering of boron carbide ceramics with Al-Si additives

被引：23

作者：

Xu, Chang-Ming ^{[1
]}

Zeng, Hong ^{[1
,2
]}

Zhang, Guo-Jun ^{[1
]}

机构：

[1] Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China

来源：

INTERNATIONAL JOURNAL OF REFRACTORY METALS & HARD MATERIALS | 2013年 / 41卷

基金：

中国国家自然科学基金;

关键词：

B4C ceramics; Pressureless sintering; Al-Si binary additives; MECHANICAL-PROPERTIES; COMPOSITES; B4C;

D O I：

10.1016/j.ijrmhm.2012.12.011

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, the pressureless sintering behavior of boron carbide (B4C) ceramics with 5-10 wt.% Al-Si binary additives was studied, while separate addition of individual elemental Al and Si was also investigated for comparison. Near fully-dense B4C ceramics can be prepared at 2150-2250 degrees C when 5-7 wt.% of Al-Si with molar ratio of 9:1 is added. In contrast to individual Al and Si, the use of the binary Al-Si additives in B4C ceramics results in a refined microstructure and increasing the Al-Si molar ratio from 1:1 to 9:1 promotes the densification of the B4C ceramics. Energy dispersion spectrum (EDS) analysis demonstrates the formation of SiC at the B4C grain boundaries. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：2 / 6

页数：5

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