Low-cost, Mo(S,Se)2-free superstrate-type solar cells fabricated with tunable band gap Cu2ZnSn(S1-xSex)4 nanocrystal-based inks and the effect of sulfurization

被引:8
作者
Wang, Chih-Liang [1 ]
Wang, Chih-Chieh [1 ]
Reeja-Jayan, B. [1 ]
Manthiram, Arumugam [1 ]
机构
[1] Univ Texas Austin, Mat Sci & Engn Program, Austin, TX 78712 USA
来源
RSC ADVANCES | 2013年 / 3卷 / 43期
关键词
FILMS; CU2ZNSNSE4; EFFICIENCY; PRECURSORS;
D O I
10.1039/c3ra42624f
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A low-cost and Mo(S,Se)(2)-free superstrate-type device structure is reported for the first time with the tunable band gap Cu2ZnSn(S1-xSex)(4) nanocrystals. Using a facile hot-injection approach with only oleylamine reagent for synthesizing Cu2ZnSn(S1-xSex)(4) nanocrystals with varied Se to (S + Se) ratio, the role of Se in Cu2ZnSn(S1-xSex)(4) nanocrystals during the sulfurization step is systematically investigated. The loss of Sn is suppressed and the grain size is enlarged when the Se in Cu2ZnSn(S1-xSex)(4) nanocrystals is replaced by S during the sulfurization. As a proof-of-concept, our superstrate-type architecture without using any binder in the ink exhibits V-oc and FF comparable to the typical substrate-type device structure, in addition to its advantage of low cost.
引用
收藏
页码:19946 / 19951
页数:6
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