Transport properties of topological insulators films and nanowires

被引:18
作者
Yi, Liu [1 ]
Zheng, Ma [1 ]
Zhao Yan-Fei [1 ]
Singh, Meenakshi [2 ,3 ]
Jian, Wang [1 ,2 ,3 ]
机构
[1] Peking Univ, Sch Phys, Int Ctr Quantum Mat, Beijing 100871, Peoples R China
[2] Penn State Univ, Ctr Nanoscale Sci, University Pk, PA 16802 USA
[3] Peking Univ, Sch Phys, Dept Phys, Beijing 100871, Peoples R China
基金
中国国家自然科学基金; 美国国家科学基金会;
关键词
topological insulator; surface state; transport property; magnetoresistance; superconducting proximity effect; SINGLE DIRAC CONE; THIN-FILMS; SURFACE-STATES; BI2TE3; BI2SE3; MAGNETORESISTANCE; SUPERCONDUCTIVITY; OSCILLATIONS; TRANSITION;
D O I
10.1088/1674-1056/22/6/067302
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The last several years have witnessed the rapid developments in the study and understanding of topological insulators. In this review, after a brief summary of the history of topological insulators, we focus on the recent progress made in transport experiments on topological insulator films and nanowires. Some quantum phenomena, including the weak antilocalization, the Aharonov-Bohm effect, and the Shubnikov-de Haas oscillations, observed in these nanostructures are described. In addition, the electronic transport evidence of the superconducting proximity effect as well as an anomalous resistance enhancement in topological insulator/superconductor hybrid structures is included.
引用
收藏
页数:14
相关论文
共 71 条
[1]   SIGNIFICANCE OF ELECTROMAGNETIC POTENTIALS IN THE QUANTUM THEORY [J].
AHARONOV, Y ;
BOHM, D .
PHYSICAL REVIEW, 1959, 115 (03) :485-491
[2]  
Analytis JG, 2010, NAT PHYS, V6, P960, DOI [10.1038/nphys1861, 10.1038/NPHYS1861]
[3]   Quantum spin Hall effect and topological phase transition in HgTe quantum wells [J].
Bernevig, B. Andrei ;
Hughes, Taylor L. ;
Zhang, Shou-Cheng .
SCIENCE, 2006, 314 (5806) :1757-1761
[4]   TRANSITION FROM METALLIC TO TUNNELING REGIMES IN SUPERCONDUCTING MICRO-CONSTRICTIONS - EXCESS CURRENT, CHARGE IMBALANCE, AND SUPER-CURRENT CONVERSION [J].
BLONDER, GE ;
TINKHAM, M ;
KLAPWIJK, TM .
PHYSICAL REVIEW B, 1982, 25 (07) :4515-4532
[5]   Structural and electrical properties of epitaxial Bi2Se3 thin films grown by hybrid physical-chemical vapor deposition [J].
Brom, Joseph E. ;
Ke, Yue ;
Du, Renzhong ;
Won, Dongjin ;
Weng, Xiaojun ;
Andre, Kalissa ;
Gagnon, Jarod C. ;
Mohney, Suzanne E. ;
Li, Qi ;
Chen, Ke ;
Xi, X. X. ;
Redwing, Joan M. .
APPLIED PHYSICS LETTERS, 2012, 100 (16)
[6]   Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator [J].
Chang, Cui-Zu ;
Zhang, Jinsong ;
Feng, Xiao ;
Shen, Jie ;
Zhang, Zuocheng ;
Guo, Minghua ;
Li, Kang ;
Ou, Yunbo ;
Wei, Pang ;
Wang, Li-Li ;
Ji, Zhong-Qing ;
Feng, Yang ;
Ji, Shuaihua ;
Chen, Xi ;
Jia, Jinfeng ;
Dai, Xi ;
Fang, Zhong ;
Zhang, Shou-Cheng ;
He, Ke ;
Wang, Yayu ;
Lu, Li ;
Ma, Xu-Cun ;
Xue, Qi-Kun .
SCIENCE, 2013, 340 (6129) :167-170
[7]   Bulk Band Gap and Surface State Conduction Observed in Voltage-Tuned Crystals of the Topological Insulator Bi2Se3 [J].
Checkelsky, J. G. ;
Hor, Y. S. ;
Cava, R. J. ;
Ong, N. P. .
PHYSICAL REVIEW LETTERS, 2011, 106 (19)
[8]   Tunable surface conductivity in Bi2Se3 revealed in diffusive electron transport [J].
Chen, J. ;
He, X. Y. ;
Wu, K. H. ;
Ji, Z. Q. ;
Lu, L. ;
Shi, J. R. ;
Smet, J. H. ;
Li, Y. Q. .
PHYSICAL REVIEW B, 2011, 83 (24)
[9]   Gate-Voltage Control of Chemical Potential and Weak Antilocalization in Bi2Se3 [J].
Chen, J. ;
Qin, H. J. ;
Yang, F. ;
Liu, J. ;
Guan, T. ;
Qu, F. M. ;
Zhang, G. H. ;
Shi, J. R. ;
Xie, X. C. ;
Yang, C. L. ;
Wu, K. H. ;
Li, Y. Q. ;
Lu, L. .
PHYSICAL REVIEW LETTERS, 2010, 105 (17)
[10]   Molecular Beam Epitaxial Growth of Topological Insulators [J].
Chen, Xi ;
Ma, Xu-Cun ;
He, Ke ;
Jia, Jin-Feng ;
Xue, Qi-Kun .
ADVANCED MATERIALS, 2011, 23 (09) :1162-1165