Van der Waals Coupled Organic Molecules with Monolayer MoS2 for Fast Response Photodetectors with Gate-Tunable Responsivity

被引:210
作者
Huang, Yu [1 ]
Zhuge, Fuwei [1 ]
Hou, Junxian [2 ]
Lv, Liang [1 ]
Luo, Peng [1 ]
Zhou, Nan [1 ]
Gan, Lin [1 ]
Zhai, Tianyou [1 ,3 ,4 ]
机构
[1] Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Hubei, Peoples R China
[2] Hebei Univ Engn, Coll Mat Sci & Engn, Dept Composite Mat & Engn, Handan 056038, Peoples R China
[3] Tianjin Univ, Dept Chem, Tianjin Key Lab Mol Optoelect Sci, Tianjin 300072, Peoples R China
[4] Collaborat Innovat Ctr Chem Sci & Engn Tianjin, Tianjin 300072, Peoples R China
基金
中国国家自然科学基金;
关键词
transition metal dichalcogenides; van der Waals junction; organic molecules; charge transfer interaction; photodetection; response dynamics; SINGLE-LAYER MOS2; PHOTOLUMINESCENCE; TRANSISTORS; MECHANISMS; GAIN;
D O I
10.1021/acsnano.8b02380
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
As a direct-band-gap transition metal dichalcogenide (TMD), atomic thin MoS2 has attracted extensive attention in photodetection, whereas the hitherto unsolved persistent photoconductance (PPC) from the ungoverned charge trapping in devices has severely hindered their employment. Herein, we demonstrate the realization of ultrafast photoresponse dynamics in monolayer MoS2 by exploiting a charge transfer interface based on surface assembled zinc phthalocyanine (ZnPc) molecules. The formed MoS2/ZnPc van der Waals interface is found to favorably suppress the PPC phenomenon in MoS2 by instantly separating photogenerated holes toward the ZnPc molecules, away from the traps in MoS2 and the dielectric interface. The derived MoS2 detector then exhibits significantly improved photoresponse speed by more than 3 orders (from over 20 s to less than 8 ms for the decay) and a high responsivity of 430 A/W after Al2O3 passivation. It is also demonstrated that the device could be further tailored to be 2-10-fold more sensitive without severely sacrificing the ultrafast response dynamics using gate modulation. The strategy presented here based on surface-assembled organic molecules may thus pave the way for realizing high-performance TMD-based photodetection with ultrafast speed and high sensitivity.
引用
收藏
页码:4062 / 4073
页数:12
相关论文
共 50 条
  • [41] Photovoltaic Field-Effect Transistors Using a MoS2 and Organic Rubrene van der Waals Hybrid
    Park, Cheol-Joon
    Park, Hyeon Jung
    Lee, Jae Yoon
    Kim, Jeongyong
    Lee, Chul-Ho
    Joo, Jinsoo
    ACS APPLIED MATERIALS & INTERFACES, 2018, 10 (35) : 29848 - 29856
  • [42] Modulating the Functions of MoS2/MoTe2 van der Waals Heterostructure via Thickness Variation
    Ngoc Thanh Duong
    Lee, Juchan
    Bang, Seungho
    Park, Chulho
    Lim, Seong Chu
    Jeong, Mun Seok
    ACS NANO, 2019, 13 (04) : 4478 - 4485
  • [43] Colloidal MoS2 van der Waals Template for Growing Highly Uniform Nanomaterials
    Lee, Kang-Nyeoung
    Park, Dae Young
    Choi, Geunchang
    Duc Anh Nguyen
    Choi, Young Chul
    Jeong, Mun Seok
    ACS APPLIED MATERIALS & INTERFACES, 2020, 12 (31) : 35716 - 35724
  • [44] Gate-tunable rectification and photoresponse in a MoTe2/SnS2 van der Waals heterostructure based P-N diode
    Elahi, Ehsan
    Khan, Muhammad Asghar
    Jeon, Jaeho
    Jerng, Sahng-Kyoon
    Al-Kahtani, Abdullah A.
    Noh, Hwayong
    JOURNAL OF MATERIALS CHEMISTRY C, 2023, 11 (40) : 13981 - 13990
  • [45] A theoretical insight into the adsorption behavior of organic molecules on MoS2 monolayer
    Tri, Nguyen Ngoc
    Huong, Cao Thi
    Trung, Nguyen Tien
    VIETNAM JOURNAL OF CHEMISTRY, 2025, 63 (02) : 261 - 267
  • [46] Origins of genuine Ohmic van der Waals contact between indium and MoS2
    Kim, Bum-Kyu
    Kim, Tae-Hyung
    Choi, Dong-Hwan
    Kim, Hanul
    Watanabe, Kenji
    Taniguchi, Takashi
    Rho, Heesuk
    Kim, Ju-Jin
    Kim, Yong-Hoon
    Bae, Myung-Ho
    NPJ 2D MATERIALS AND APPLICATIONS, 2021, 5 (01)
  • [47] Optical identification of interlayer coupling of graphene/MoS2 van der Waals heterostructures
    Yang, Mingming
    Wang, Longlong
    Hu, Guofeng
    Chen, Xue
    Gong, Peng Lai
    Cong, Xin
    Liu, Yi
    Yang, Yuanbo
    Li, Xiaoli
    Zhao, Xiaohui
    Liu, Xuelu
    NANO RESEARCH, 2021, 14 (07) : 2241 - 2246
  • [48] van der Waals Epitaxy of MoS2 Layers Using Graphene As Growth Templates
    Shi, Yumeng
    Zhou, Wu
    Lu, Ang-Yu
    Fang, Wenjing
    Lee, Yi-Hsien
    Hsu, Allen Long
    Kim, Soo Min
    Kim, Ki Kang
    Yang, Hui Ying
    Li, Lain-Jong
    Idrobo, Juan-Carlos
    Kong, Jing
    NANO LETTERS, 2012, 12 (06) : 2784 - 2791
  • [49] Low Power Consumption Gate-Tunable WSe2/SnSe2 van der Waals Tunnel Field-Effect Transistor
    Abderrahmane, Abdelkader
    Woo, Changlim
    Ko, Pil-Ju
    ELECTRONICS, 2022, 11 (05)
  • [50] Thermodynamically stable octahedral MoS2 in van der Waals hetero-bilayers
    Ahmed, Tanweer
    Naik, Mit H.
    Kumari, Simran
    Suman, Smriti P.
    Debnath, Rahul
    Dutta, Sudipta
    Waghmare, Umesh, V
    Jain, Manish
    Ghosh, Arindam
    2D MATERIALS, 2019, 6 (04)