Growth of Cu films on annealed Cu/O/Ru(0001) studied by STM

被引：8
作者：
Wolter, H [1 ]
Meinel, K [1 ]
Ammer, C [1 ]
Wandelt, K [1 ]
Neddermeyer, H [1 ]
机构：
[1] UNIV BONN,INST PHYS & THEORET CHEM,D-53115 BONN,GERMANY
来源：
SURFACE SCIENCE | 1997年 / 377卷 / 1-3期
关键词：
copper; epitaxy; growth; oxygen; ruthenium; scanning tunneling microscopy;
D O I：
10.1016/S0039-6028(96)01554-3
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We have investigated the growth of Cu at 400 K on annealed Cu films initially grown on O-precovered Ru(0001) by means of STM. Annealing the layer-like Cu films on O/Ru(0001) at 700 K results in a Stranski-Krastanov film morphology. Besides three-dimensional islands a two-dimensional base layer of Cu is formed which is three monolayers thick and covered by an O/Cu surfactant structure. After Cu deposition on the base layer an enhanced nucleation density is found compared to the layer-like Cu films on O/Ru(0001). The film consists of two-dimensional islands of uniform size. Compared to the growth of Cu on O/Ru(0001) at 400 K a more perfect layer-by-layer growth is induced.
引用
收藏
页码：983 / 987
页数：5
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