Fabrication of Visible-Light-Transparent Solar Cells Using p-Type NiO Films by Low Oxygen Fraction Reactive RF Sputtering Deposition

被引：55

作者：

Warasawa, Moe ^{[1
]}

Watanabe, Yousuke ^{[1
]}

Ishida, Jun ^{[1
]}

Murata, Yoshitsuna ^{[1
]}

Chichibu, Shigefusa F. ^{[2
]}

Sugiyama, Mutsumi ^{[1
]}

机构：

[1] Tokyo Univ Sci, Fac Sci & Technol, Dept Elect Engn, Noda, Chiba 2788510, Japan

[2] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Sendai, Miyagi 9808577, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 02期

关键词：

THIN-FILMS; OXIDE SEMICONDUCTORS; OPTICAL-PROPERTIES; DIODE;

D O I：

10.7567/JJAP.52.021102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Visible-light-transparent p-type NiO films were deposited by reactive RF sputtering under unintentional heating. An optical transmittance of >80% was obtained in the wavelength range of 500-800nm when the films were deposited under a very low O-2 fraction in the gas phase O-2/(Ar + O-2) = 0.5%. This result may reflect a decrease in the concentration of Ni vacancies due to the increase in their formation energy under oxygen-poor deposition conditions. Heterostructure pn junctions consisting of p-type NiO and n-type ZnO layers were also deposited. We eventually observed a slight but noticeable photovoltaic effect. (C) 2013 The Japan Society of Applied Physics

引用

页数：4

共 30 条

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