Nanocrystalline thin films synthesized from a Ti2AlN compound target by high power impulse magnetron sputtering technique

被引:30
作者
Zhang, Teng Fei [1 ,2 ]
Wang, Qi Min [1 ,3 ]
Lee, Junghoon [2 ]
Ke, Peiling [4 ]
Nowak, Roman [5 ]
Kim, Kwang Ho [1 ,2 ]
机构
[1] Pusan Natl Univ, Natl Core Res Ctr Hybrid Mat Solut, Pusan 609735, South Korea
[2] Pusan Natl Univ, Sch Mat Sci & Engn, Pusan 609735, South Korea
[3] Guangdong Univ Technol, Sch Electromech Engn, Guangzhou 510006, Guangdong, Peoples R China
[4] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Div Surface Engn, Ningbo 315201, Zhejiang, Peoples R China
[5] Aalto Univ, Dept Mat Sci & Engn, Nord Hysitron Lab, Aalto 00076, Finland
关键词
MAX-phase films; High power impulse magnetron sputtering (HIPIMS); High resolution TEM (HRTEM); Mechanical properties; Oxidation; Corrosion; ION ENERGY; DEPOSITION; MICROSTRUCTURE; DISTRIBUTIONS; MODULUS; CR2ALC; TIN;
D O I
10.1016/j.surfcoat.2012.09.050
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Ti-Al-N thin films were synthesized utilizing a high power impulse magnetron sputtering (HIPIMS) from a Ti2AlN compound target. The deposition temperatures and bias voltages were varied in the range of room temperature (RI) to 450 degrees C and 0 V to -70 V. respectively. It was indicated that amorphous films formed at low deposition temperatures of RT and 300 degrees C, which changed into MAX-phase Ti2AlN films after vacuum annealing at 800 degrees C for 1 h. Densely packed nano-fibrous crystalline films mainly composing of Ti2AlN MAX phase and tetragonal Ti2N phase were acquired at deposition temperature of 450 degrees C, which exhibited stable film structure during vacuum annealing at 800 degrees C. The Ti2AlN-Ti2N composite films exhibited excellent oxidation and corrosion resistance, as compared to (Ti,Al)N film having same Ti/Al ratio and/or TiN film synthesized by a hybrid coating system with HIPIMS and DC pulse magnetron sputtering. The mechanical properties of the Ti2AlN-Ti2N films were also investigated in this work. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:199 / 206
页数:8
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