Studies on the preparation of Bi4Ti3O12 thin films by DC reactive magnetron sputtering with two targets

被引：0

作者：

Yang Jian-ping ^{[1
]}

Li Xing-ao ^{[2
]}

Li Yong-tao ^{[1
]}

Ren Shan-lin ^{[1
]}

Wang Hai-yun ^{[1
]}

Wang Li-xia ^{[1
]}

机构：

[1] Nanjing Univ Posts & Telecommun, Sch Sci, Nanjing 210046, Jiangsu, Peoples R China

[2] Nanjing Univ Posts & Telecommun, Sch Mat Sci & Engn, Nanjing 210046, Jiangsu, Peoples R China

来源：

2011 INTERNATIONAL CONFERENCE ON FUTURE COMPUTER SCIENCE AND APPLICATION (FCSA 2011), VOL 4 | 2011年

关键词：

Bi4Ti3O12; DC magnetic sputtering; ferroelectric thin films; PULSED-LASER DEPOSITION; SOL-GEL PROCESS; SI; FABRICATION; TITANATE;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

Bi4Ti3O12 ferroelectric thin films on Pt/Si(111) substrates were prepared by DC reactive magnetron sputtering with two targets. The effects of reactive conditions for the growthbehavior, crystal structure and ferroelectric properties of Bi4Ti3O12 were investigated. The results show that the concentration of oxygen in the chamber is the key factor of affecting the growth of Bi4Ti3O12 thin film, while the powers of Ti target and Bi target were fixed. When the power of Ti target was fixed 60W and Bi target was fixed SOW, for the Bi4Ti3O12 films good growth, the current rate of oxygen equals that of argon.

引用

页码：168 / 171

页数：4

共 16 条

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