Effect of Density of States on Mobility in Small-Molecule n-Type Organic Thin-Film Transistors Based on a Perylene Diimide

被引:21
作者
Castro-Carranza, A. [1 ]
Nolasco, J. C. [1 ]
Estrada, M. [2 ]
Gwoziecki, R. [3 ]
Benwadih, M. [3 ]
Xu, Y. [4 ,5 ]
Cerdeira, A. [2 ]
Marsal, L. F. [1 ]
Ghibaudo, G. [4 ,5 ]
Iniguez, B. [1 ]
Pallares, J. [1 ]
机构
[1] Univ Rovira & Virgili, Tarragona 43007, Spain
[2] Inst Politecn Nacl CINVESTAV IPN, Ctr Invest & Estudios Avanzados, Mexico City 07360, DF, Mexico
[3] Lab Innovat Technol Energies Nouvelles & Nanomat, Commissariat Energie Atom & Energies Alternat, F-38052 Grenoble, France
[4] Inst Natl Politecn Grenoble, Micro & Nanotechnol Innovat Ctr, Lab Hyperfrequences & Caracterisat IMEP LAHC, F-38016 Grenoble, France
[5] Inst Microelect Electromagnetisme & Photon, F-38016 Grenoble, France
关键词
Density of states (DOS); field-effect transistor (FET); mobility; organic semiconductor; perylene diimides (PDIs); thin-film transistor (TFT); PERFORMANCE;
D O I
10.1109/LED.2012.2201441
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Bottom-contact organic thin-film transistors with active layers made of n-type small-molecule perylene diimide Polyera ActivinkTM N1400 were fabricated and were compared with those of 6,13-bis (triisopropylsilylethinyl)pentacene and poly(triarylamine) (PTAA). For the three devices, the mobility values and the distribution of the density of states (DOS) were estimated from current-voltage measurements. The mobility value of the N1400 samples increases up to four orders of magnitude within the measured voltage range, reaching the PTAA mobility values at high gate voltages. Finally, we analyze the effect of the distribution of the DOS on the mobility by studying the free-charge sheet concentration.
引用
收藏
页码:1201 / 1203
页数:3
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