A physical insight into the quasi-saturation effect in VDMOS power transistors

被引：3

作者：

Li, ZM

Mawby, PA

Board, K

机构：

[1] Department of Electrical and Electronic Engineering, University of Wales, Swansea, SA2 8PP, Singleton Park

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1997年 / 83卷 / 01期

关键词：

D O I：

10.1080/002072197135599

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The physical mechanisms that cause quasi-saturation phenomena in a commercial 500 V VDMOS device are studied and modelled using a two-dimensional numerical simulator. It is found that there exist two mechanisms that limit the drain current and lead the device into quasi-saturation. These are the formation of a gate-independent dipole layer, and the high resistivity of the drift region. A modified VDMOS structure with an ion-implanted region is proposed which increases the drain current carrying capability and reduces the on-resistance by up to 60%.

引用

页码：13 / 22

页数：10

共 6 条

[1]

BALIGA BJ, 1987, MODERN POWER DEVICES

[2] STUDY OF THE QUASI-SATURATION EFFECT IN VDMOS TRANSISTORS [J].