Dynamic Atomic Reconstruction: How Fe3O4 Thin Films Evade Polar Catastrophe for Epitaxy

被引：45

作者：

Chang, C. F. ^{[1
]}

Hu, Z. ^{[1
]}

Klein, S. ^{[2
,7
]}

Liu, X. H. ^{[1
]}

Sutarto, R. ^{[2
,8
]}

Tanaka, A. ^{[3
]}

Cezar, J. C. ^{[4
,9
]}

Brookes, N. B. ^{[4
]}

Lin, H. -J. ^{[5
]}

Hsieh, H. H. ^{[6
]}

Chen, C. T. ^{[5
]}

Rata, A. D. ^{[1
,10
]}

Tjeng, L. H. ^{[1
]}

机构：

[1] Max Planck Inst Chem Phys Solids, Nothnitzer Str 40, D-01187 Dresden, Germany

[2] Univ Cologne, Inst Phys 2, Zulpicher Str 77, D-50937 Cologne, Germany

[3] Hiroshima Univ, ADSM, Dept Quantum Matter, Higashihiroshima 7398530, Japan

[4] European Synchrotron Radiat Facil, 71 Ave Martyrs, F-38000 Grenoble, France

[5] Natl Synchrotron Radiat Res Ctr, 101 Hsin Ann Rd, Hsinchu 30077, Taiwan

[6] Natl Def Univ, Chung Cheng Inst Technol, Taoyuan 335, Taiwan

[7] German Aerosp Ctr, Inst Mat Phys Space, D-51147 Cologne, Germany

[8] Canadian Light Source, Saskatoon, SK S7N 2V3, Canada

[9] Brazilian Synchrotron Light Lab, Natl Ctr Res Energy & Mat, CP 6192, BR-13083970 Campinas, SP, Brazil

[10] Univ Halle Wittenberg, Inst Phys, D-06099 Halle, Germany

来源：

PHYSICAL REVIEW X | 2016年 / 6卷 / 04期

关键词：

STABILIZATION; PHOTOEMISSION; TRANSITION; BEHAVIOR; INTERFACES; SURFACE; GROWTH;

D O I：

10.1103/PhysRevX.6.041011

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Polar catastrophe at the interface of oxide materials with strongly correlated electrons has triggered a flurry of new research activities. The expectations are that the design of such advanced interfaces will become a powerful route to engineer devices with novel functionalities. Here, we investigate the initial stages of growth and the electronic structure of the spintronic Fe3O4/MgO(001) interface. Using soft x-ray absorption spectroscopy, we have discovered that the so-called A-sites are completely missing in the first Fe3O4 monolayer. This discovery allows us to develop an unexpected but elegant growth principle in which, during deposition, the Fe atoms are constantly on the move to solve the divergent electrostatic potential problem, thereby ensuring epitaxy and stoichiometry at the same time. This growth principle provides a new perspective for the design of interfaces.

引用

页数：7

共 47 条

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