Enhanced Infrared Magneto-Optical Response of the Nonmagnetic Semiconductor BiTeI Driven by Bulk Rashba Splitting

被引：44

作者：

Demko, L. ^{[1
]}

Schober, G. A. H. ^{[2
,3
]}

Kocsis, V. ^{[4
,5
]}

Bahramy, M. S. ^{[6
,7
]}

Murakawa, H. ^{[6
,7
]}

Lee, J. S. ^{[2
]}

Kezsmarki, I. ^{[4
,5
]}

Arita, R. ^{[2
,6
,7
]}

Nagaosa, N. ^{[2
,6
,7
]}

Tokura, Y. ^{[1
,2
,6
,7
]}

机构：

[1] Univ Tokyo, Exploratory Res Adv Technol ERATO, Japan Sci & Technol Agcy JST, Multiferro Project,Dept Appl Phys, Tokyo 1138656, Japan

[2] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan

[3] Heidelberg Univ, Inst Theoret Phys, D-69120 Heidelberg, Germany

[4] Tech Univ Budapest, Dept Phys, H-1111 Budapest, Hungary

[5] Hungarian Acad Sci, Econ & Condensed Matter Res Grp, H-1111 Budapest, Hungary

[6] RIKEN, ASI, Cross Correlated Mat Res Grp CMRG, Wako, Saitama 3510198, Japan

[7] RIKEN, ASI, CERG, Wako, Saitama 3510198, Japan

来源：

PHYSICAL REVIEW LETTERS | 2012年 / 109卷 / 15期

基金：

日本学术振兴会; 日本科学技术振兴机构;

关键词：

Semiconductor doping - Bismuth compounds - Conduction bands;

D O I：

10.1103/PhysRevLett.109.167401

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We study the magneto-optical (MO) response of the polar semiconductor BiTeI with giant bulk Rashba spin splitting at various carrier densities. Despite being nonmagnetic, the material is found to yield a huge MO activity in the infrared region under moderate magnetic fields (up to 3 T). Our first-principles calculations show that the enhanced MO response of BiTeI comes mainly from the intraband transitions between the Rashba-split bulk conduction bands. These transitions connecting electronic states with opposite spin directions become active due to the presence of strong spin-orbit interaction and give rise to distinct features in the MO spectra with a systematic doping dependence. We predict an even more pronounced enhancement in the low-energy MO response and dc Hall effect near the crossing (Dirac) point of the conduction bands.

引用

页数：5

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