InAs/Al0.2Ga0.8Sb quantum well Hall sensors with improved temperature stability

被引：3
作者：
Bekaert, J [1 ]
Moshchalkov, VV
Bruynseraede, Y
Behet, M
De Boeck, J
Borghs, G
机构：
[1] Katholieke Univ Leuven, Lab Vaste Stoffys Magnetisme, B-3001 Louvain, Belgium
[2] IMEC, B-3001 Louvain, Belgium
来源：
REVIEW OF SCIENTIFIC INSTRUMENTS | 1999年 / 70卷 / 06期
关键词：
D O I：
10.1063/1.1149834
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Cross-shaped Hall sensors with high sensitivity and excellent temperature stability were fabricated from quantum wells based on an InAs/Al0.2Ga0.8Sb heterostructure. The layers were grown on semi-insulating GaAs substrates by molecular beam epitaxy. Maximum Hall mobilities of 215 000 cm(2)/V s with sheet carrier concentrations of 9 x 10(11) cm(-2) were measured at 4.2 K for an undoped quantum well structure. These transport properties result in sensitivities as high as 3 T-1 (for voltage drive) and 650 Omega/T (for current drive). Additional Si delta doping in the middle of the InAs quantum well leads to a highly improved temperature stability of the sensitivities. (C) 1999 American Institute of Physics. [S0034-6748(99)03306-7].
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收藏
页码：2715 / 2718
页数：4
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