Low-temperature processing of superconducting Tl2Ba2Ca1Cu2Ox films on CeO2 buffered sapphire

被引：19

作者：

OConnor, JD ^{[1
]}

DewHughes, D ^{[1
]}

Bramley, AP ^{[1
]}

Grovenor, CRM ^{[1
]}

Goringe, MJ ^{[1
]}

Morley, SM ^{[1
]}

机构：

[1] UNIV OXFORD,DEPT MAT,OXFORD OX1 3PJ,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 01期

关键词：

D O I：

10.1063/1.118093

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Tl2Ba2Ca1Cu2Ox thin films with excellent alignment have been grown on CeO2 buffered R-plane sapphire using an ex situ anneal step in argon atmospheres at temperatures of 720-740 degrees C. With this low-temperature process we have overcome the serious problem of reaction layers being formed at the CeO2/Tl2Ba2Ca1Cu2Ox interface, which can degrade film properties. The presence of a sharp CeO2/Tl2Ba2Ca1Cu2Ox interface has been confirmed by x-ray diffraction, transmission electron microscopy, and high resolution electron microscopy observations. Films have well connected morphologies, with critical temperature (T-c) values of up to 101.6 K and critical current density (J(c)) values of up to 1.25 x 10(5) A cm(-2). (C) 1996 American Institute of Physics.

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页码：115 / 117

页数：3

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