High carrier concentration in high Al-composition AlGaN-channnel HEMTs

被引：19

作者：

Hashimoto, Shin ^{[1
,2
]}

Akita, Katsushi ^{[1
,2
]}

Yamamoto, Yoshiyuki ^{[1
,2
]}

Ueno, Masaki ^{[1
,2
]}

Nakamura, Takao ^{[1
]}

Yafune, Norimasa ^{[3
,4
]}

Sakuno, Keiichi

Tokuda, Hirokuni ^{[5
]}

Kuzuhara, Masaaki ^{[5
]}

Takeda, Kenichiro ^{[6
]}

Iwaya, Motoaki ^{[6
]}

Amano, Hiroshi

机构：

[1] Sumitomo Elect Ind Ltd, 1-1-1 Koya Kita, Itami, Hyogo 6640016, Japan

[2] Sharp Corporat, Tenri, Nara 6328567, Japan

[3] Res Dev Japan, Dev Ctr Metal, Tokyo 1050003, Japan

[4] Univ Fukui, Fukui 9108507, Japan

[5] Meiji Univ, Tempaku Ku, Nagoya, Aichi 4688502, Japan

[6] Nagoya Univ, Nagoya, Aichi 4648601, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 2 | 2012年 / 9卷 / 02期

关键词：

AlGaN; AlN; HEMT; HFET; AlGaN-channel HEMT; 2DEG; PERFORMANCE;

D O I：

10.1002/pssc.201100289

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

High Al-composition (Al = 51%) and low Al-composition (Al = 20%) AlGaN-channel high-electronmobility transistors (HEMTs) on AlN layers with very high carrier concentration were demonstrated. In two types of HEMTs, 2-dimensional electron gases (2DEG) were clearly observed and peak carrier concentration and sheet carrier concentration were approximately 10(20) cm(-3) and higher than 2 x 10(13) cm(-2), respectively. From the Xray diffraction (XRD) measurements, it was observed that the AlGaN channel layers on the AlN layers were partially relaxed and the degree of relaxation decreased with increasing Al-composition of AlGaN channel layers. Therefore the misfit dislocations in the high Al-composition HEMTs were considered to be lower than those in the low Al-composition HEMTs. Furthermore, it was revealed that very high Al-composition of AlGaN barrier layers can be grown coherently on the AlGaN channel layers in consequence of the partly relaxation of the AlGaN channel layers, which of lattice constants of a-axis were smaller than that of fully relaxed AlGaN channel layers. Therefore very high carrier concentration of 2DEG can be obtained in spite of the high Al-composition of AlGaN channel layers. We considered that this high carrier concentration of 2DEG was necessary to demonstrate high Al-composition AlGaN-channel HEMTs. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：373 / 376

页数：4

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