Distinct fine and coarse ripples on 4H-SiC single crystal induced by femtosecond laser irradiation

被引：41

作者：

Tomita, T ^{[1
]}

Kinoshita, K ^{[1
]}

Matsuo, S ^{[1
]}

Hashimoto, S ^{[1
]}

机构：

[1] Univ Tokushima, Dept Ecosyst Engn, Tokushima 7708506, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2006年 / 45卷 / 12-16期

关键词：

ripple; 4H-SiC; femtosecond laser; ablation;

D O I：

10.1143/JJAP.45.L444

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Upon femtosecond pulsed-laser irradiation, periodic structures referred to as "ripples" were fabricated on the surface of a 4H-SiC single crystal. The periodic structures consisted of two concentric regions in the irradiated spots which were clearly distinguished by the period. Surface morphologies were characterized as a function of energy, accumulation number, and interval of pulses. The difference in the threshold of fine and coarse ripples was identified for the first time. The possible formation mechanisms of these structures were discussed.

引用

页码：L444 / L446

页数：3

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