Structural and electrical characteristics of metal contacts on n-type GaN/Si(111)

被引：0
作者：
Chuah, L. S. [1 ]
Hassan, Z. [1 ]
Chin, C. W. [1 ]
Abu Hassan, H. [1 ]
机构：
[1] Univ Sains Malaysia, Sch Phys, Nanooptoelect Res & Technol Lab, Minden 11800, Penang, Malaysia
来源：
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS | 2008年 / 2卷 / 12期
关键词：
Thermal stability; Electrical characteristics; Surface morphology; GaN;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this we report on the electrical characteristics and surface morphology of four different metal contacts (Ag, Ti, Pt and Ni) on GaN films grown on silicon substrate. The samples were annealed at different temperatures ranging from 300 C degrees to 900 degrees C under flowing nitrogen gas for 15 minutes. The electrical behaviors of the contacts were analyzed by current-voltage (I-V) measurements. Scanning electron microscopy (SEM) measurements and energy dispersive spectroscopy (EDS) were carried out to examine the surface morphology and chemical composition of the metal contacts.
引用
收藏
页码：842 / 845
页数：4
相关论文
共 50 条
  • [41] Germanium - the superior dopant in n-type GaN
    Nenstiel, C.
    Buegler, M.
    Callsen, G.
    Nippert, F.
    Kure, T.
    Fritze, S.
    Dadgar, A.
    Witte, H.
    Blaesing, J.
    Krost, A.
    Hoffmann, A.
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2015, 9 (12): : 716 - 721
  • [42] Investigation of structural, optical, and electrical characteristics of an AlGaN/GaN high electron mobility transistor structure across a 200 mm Si(111) substrate
    Perozek, J.
    Lee, H-P
    Krishnan, B.
    Paranjpe, A.
    Reuter, K. B.
    Sadana, D. K.
    Bayram, C.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2017, 50 (05)
  • [43] Structural and Optical Properties of GaN Nanowires Formed on Si(111)
    Han, Sangmoon
    Choi, Ilgyu
    Song, Jihoon
    Lee, Cheul-Ro
    Cho, Il-Wook
    Ryu, Mee-Yi
    Kim, Jin Soo
    APPLIED SCIENCE AND CONVERGENCE TECHNOLOGY, 2018, 27 (05): : 95 - 99
  • [44] Effects of thermal annealing on the electrical and structural properties of Mo/Au schottky contacts on n-GaN
    Chen, Jiabo
    Bian, Zhaoke
    Liu, Zhihong
    Zhu, Dan
    Duan, Xiaoling
    Wu, Yinhe
    Jia, Yanqing
    Ning, Jing
    Zhang, Jincheng
    Hao, Yue
    JOURNAL OF ALLOYS AND COMPOUNDS, 2021, 853
  • [45] Theoretical studies of low strain n-type GaN co-doped by Si and Sn
    Mao, Qinan
    Ji, Zhenguo
    Xi, Junhua
    He, Haiyan
    Cao, Hong
    PHYSICA B-CONDENSED MATTER, 2010, 405 (01) : 145 - 147
  • [46] Evolution of surface microstructure of Re-Al-Ni-Au based ohmic contacts on n-type GaN
    Shah, Amit P.
    Chalke, Bhagyashree A.
    Parmar, Jayesh B.
    Ghag, Manish B.
    Bhattacharya, Arnab
    APPLIED RESEARCH, 2024, 3 (04):
  • [47] Electrical characterization of Schottky contacts to N-polar GaN
    Downey, B. P.
    Meyer, D. J.
    Katzer, D. S.
    Storm, D. F.
    Binari, S. C.
    SOLID-STATE ELECTRONICS, 2013, 86 : 17 - 21
  • [48] Effect of thermal annealing on electrical and structural properties of Ni/Au/n-GaN Schottky contacts
    Akkaya, A.
    Esmer, L.
    Kantar, B. Boyarbay
    Cetin, H.
    Ayyildiz, E.
    MICROELECTRONIC ENGINEERING, 2014, 130 : 62 - 68
  • [49] Properties of N-Type GaN Thin Film with Si-Ti Codoping on a Glass Substrate
    Liu, Wei-Sheng
    Chang, Yu-Lin
    Tan, Chun-Yuan
    Tsai, Cheng-Ting
    Kuo, Hsing-Chun
    CRYSTALS, 2020, 10 (07): : 1 - 13
  • [50] Electrochemical Formation of N-type GaN and N-type InP Porous Structures for Chemical Sensor Applications
    Sato, Taketomo
    Zhang, Xiaoyi
    Ito, Keisuke
    Matsumoto, Satoru
    Kumazaki, Yusuke
    2016 IEEE SENSORS, 2016,
12345