Structural and electrical characteristics of metal contacts on n-type GaN/Si(111)

被引：0
作者：
Chuah, L. S. [1 ]
Hassan, Z. [1 ]
Chin, C. W. [1 ]
Abu Hassan, H. [1 ]
机构：
[1] Univ Sains Malaysia, Sch Phys, Nanooptoelect Res & Technol Lab, Minden 11800, Penang, Malaysia
来源：
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS | 2008年 / 2卷 / 12期
关键词：
Thermal stability; Electrical characteristics; Surface morphology; GaN;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this we report on the electrical characteristics and surface morphology of four different metal contacts (Ag, Ti, Pt and Ni) on GaN films grown on silicon substrate. The samples were annealed at different temperatures ranging from 300 C degrees to 900 degrees C under flowing nitrogen gas for 15 minutes. The electrical behaviors of the contacts were analyzed by current-voltage (I-V) measurements. Scanning electron microscopy (SEM) measurements and energy dispersive spectroscopy (EDS) were carried out to examine the surface morphology and chemical composition of the metal contacts.
引用
收藏
页码：842 / 845
页数：4
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