Nonlinear XUV-optical transient grating spectroscopy at the Si L2,3-edge

被引：16

作者：

Bohinc, R. ^{[1
]}

Pamfilidis, G. ^{[1
]}

Rehault, J. ^{[1
]}

Radi, P. ^{[1
]}

Milne, C. ^{[1
]}

Szlachetko, J. ^{[2
]}

Bencivenga, F. ^{[3
]}

Capotondi, F. ^{[3
]}

Cucini, R. ^{[4
]}

Foglia, L. ^{[3
]}

Masciovecchio, C. ^{[3
]}

Mincigrucci, R. ^{[3
]}

Pedersoli, E. ^{[3
]}

Simoncig, A. ^{[3
]}

Mahne, N. ^{[5
]}

Cannizzo, A. ^{[6
]}

Frey, H. M. ^{[6
]}

Ollmann, Z. ^{[6
]}

Feurer, T. ^{[6
]}

Maznev, A. A. ^{[7
]}

Nelson, K. ^{[7
]}

Knopp, G. ^{[1
]}

机构：

[1] Paul Scherrer Inst, CH-5232 Villigen, Switzerland

[2] Polish Acad Sci, Inst Nucl Phys, PL-31342 Krakow, Poland

[3] Elettra Sincrotrone Trieste SCpA SS, 14 Km 163,5 Area Sci Pk, I-34012 Trieste, Italy

[4] Ist Off Mat CNR, I-34149 Basovizza, TS, Italy

[5] IOM CNR, Str Statale 14 Km 163-5, I-34149 Trieste, Italy

[6] Univ Bern, Inst Appl Phys, CH-3012 Bern, Switzerland

[7] MIT, 77 Massachusetts Ave, Cambridge, MA 02139 USA

来源：

APPLIED PHYSICS LETTERS | 2019年 / 114卷 / 18期

基金：

瑞士国家科学基金会;

关键词：

X-RAY; 4-WAVE-MIXING EXPERIMENTS; AUGER-RECOMBINATION; DYNAMICS;

D O I：

10.1063/1.5085413

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Time-resolved transient grating (TG) spectroscopy facilitates detailed studies of electron dynamics and transport phenomena by means of a periodic excitation of matter with coherent ultrashort light pulses. Several current and next generation free-electron laser (FEL) facilities provide fully coherent pulses with few femtosecond pulse durations and extreme ultraviolet (XUV) photon energies. Thus, they allow for transient grating experiments with periodicities as small as tens of nanometers and with element specific photon energies. Here, we demonstrate the element specificity of XUV TG (X-TG) experiments by tuning the photon energy across the Si L-2,L-3-edge of Si3N4. We observe a shortening of the signal decay when increasing the XUV photon energy above the absorption edge. The analysis of the wavelength dependent signal shows that the faster decay is driven by the increase in the charge carrier density. From the decay constants the interband Auger coefficient at elevated temperatures and high electron densities has been determined. Published under license by AIP Publishing.

引用

页数：5

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