The growth of indium selenide thin films from a novel asymmetric dialkyldiselenocarbamate of indium

被引：42

作者：

OBrien, P

Otway, DJ

Walsh, JR

机构：

[1] Department of Chemistry, Imp. Coll. Sci., Technol. and Med., London SW7 2AZ, Exhibition Road

来源：

CHEMICAL VAPOR DEPOSITION | 1997年 / 3卷 / 04期

关键词：

indium selenide; MOCVD;

D O I：

10.1002/cvde.19970030411

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Thin films of cubic In2Se3 have been grown by low-pressure metal-organic chemical vapor deposition (LP-MOCVD) using the novel precursor In(Se2CNMe n-hexyl)(3). The precursor was prepared from carbon diselenide and a modified experimental procedure for the synthesis of CSe2 is described. Films were grown on glass and InP(111) between 450 and 500 degrees C, and characterized by X-ray diffraction and scanning electron microscopy.

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页码：227 / 229

页数：3

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