Energy-level structure of nitrogen-doped graphene quantum dots

被引:292
作者
Tang, Libin [1 ,2 ]
Ji, Rongbin [2 ]
Li, Xueming [3 ]
Teng, Kar Seng [4 ]
Lau, Shu Ping [1 ]
机构
[1] Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China
[2] Kunming Inst Phys, Kunming 650223, Peoples R China
[3] Yunnan Normal Univ, Solar Energy Res Inst, Kunming 650092, Peoples R China
[4] Swansea Univ, Coll Engn, Multidisciplinary Nanotechnol Ctr, Swansea SA2 8PP, W Glam, Wales
基金
中国国家自然科学基金;
关键词
CARBON NANOTUBES; OXIDE; GRAPHITE; GLUCOSE; SHEETS; GROWTH; FILMS;
D O I
10.1039/c3tc30877d
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The doping of carbon-based materials is of great importance due to its ability to modulate their optical, electrical and optoelectronic properties. Nitrogen-doped graphene quantum dots (N-GQDs) have received significant attention due to their superior electrocatalytic activity, optical properties and biocompatibility. The energy-level structure of N-GQDs remains unknown, which hinders the development of N-GQDs for various applications. Here, we report a one-pot synthesis method to prepare large-quantity N-GQDs at room temperature and atmospheric pressure under a prolonged reaction time. Using this approach, we can effectively dope N into the N-GQDs. As revealed by electron energy loss spectroscopy, N-doping introduces a new energy level into the electronic structure, which is responsible for tuning the optical properties of the N-GQDs.
引用
收藏
页码:4908 / 4915
页数:8
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