The effect of La2O3-incorporation in HfO2 dielectrics on Ge substrate by atomic layer deposition

被引：35
作者：
Oh, Il-kwon [1 ]
Kim, Min-Kyu [1 ]
Lee, Jae-seung [1 ]
Lee, Chang-Wan [1 ,2 ]
Lansalot-Matras, Clement [3 ]
Noh, Wontae [3 ]
Park, Jusang [1 ]
Noori, Atif [4 ]
Thompson, David [4 ]
Chu, Schubert [4 ]
Maeng, W. J. [5 ]
Kim, Hyungjun [1 ]
机构：
[1] Yonsei Univ, Sch Elect & Elect Engn, Seoul 120749, South Korea
[2] Korea Res Inst Chem Technol, Taejon 305600, South Korea
[3] Yonsei Univ, Air Liquide Korea Co, Seoul 120749, South Korea
[4] Appl Mat Inc, Sunnyvale, CA 94085 USA
[5] Univ Wisconsin, Dept Mat Sci & Technol, Madison, WI 53706 USA
来源：
APPLIED SURFACE SCIENCE | 2013年 / 287卷
关键词：
High k; Germanate; La2O3; HfO2; Atomic layer deposition; Bilayer; Doping; LaGeOx; La(iprCp)(3); ELECTRICAL-PROPERTIES; THIN-FILMS; METAL; GERMANIUM; CAPACITORS; ZRO2;
D O I：
10.1016/j.apsusc.2013.09.153
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We compared the electrical properties of HfO2, HfO2/La2O3, and La-doped HfO2 gate insulators deposited on Ge substrate using an atomic layer deposition (ALD) process. TDMAH [tetrakis(dimethylamino)hafnium] and La(iprCp)(3) [tris(isopropyl-cyclopentadienyl) lanthanum] were employed as Hf and La precursors, respectively. Chemical compositions and binding structures were analyzed by X-ray photoelectron spectroscopy (XPS). Electrical properties were evaluated by capacitance-voltage (C-V) and current-voltage (I-V) measurements. We found that incorporation of La2O3 near Ge can enhance the electrical properties of Ge MOS capacitors. The best electrical properties of 50 mV of hysteresis and mid similar to 10(12) cm(-2) eV(-1) range interface states were found for the 400 degrees C-annealed HfO2/La2O3 bilayer sample. These values are significantly better than those of ALD HfO2 gate insulators on Ge. We attribute this to the formation of LaGeOx layers on the Ge surface, which reduces Ge-O bonding. (C) 2013 Elsevier B.V. All rights reserved.
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收藏
页码：349 / 354
页数：6
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