A New Holistic Model of 2-D Semiconductor FETs

被引：37

作者：

Marin, Enrique G. ^{[1
,2
]}

Bader, Samuel James ^{[3
]}

Jena, Debdeep ^{[4
,5
]}

机构：

[1] Cornell Univ, Ithaca, NY 14853 USA

[2] Univ Pisa, Dipartimento Ingn Informaz, I-56122 Pisa, Italy

[3] Cornell Univ, Dept Appl & Engn Phys, Ithaca, NY 14853 USA

[4] Cornell Univ, Dept ECE, Ithaca, NY 14853 USA

[5] Cornell Univ, Dept MSE, Ithaca, NY 14853 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2018年 / 65卷 / 03期

关键词：

2-D semiconductors; compact modeling; drift-diffusion transport; Fermi-Dirac (FD) statistics; FET; 2D SEMICONDUCTOR; TRANSISTORS; MOBILITY;

D O I：

10.1109/TED.2018.2797172

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An analytical compact model for 2-D crystal FETs is proposed. It provides an explicit expression for the drain current as a function of the gate and drain voltages considering Fermi-Dirac statistics and drift-diffusion transport. The model is applicable to n-type or p-type symmetric and asymmetric double gate devices as well as single gate transistors. It is validated against experimental results and can be used to explore in a simple but accurate fashion the physics and the performance limits of 2-D crystal FETs.

引用

页码：1239 / 1245

页数：7

共 19 条

[1]

[Anonymous], 2010, Handbook of Mathematical Functions

[2] Recent Advances in Two-Dimensional Materials beyond Graphene [J].

Bhimanapati, Ganesh R. ;

Lin, Zhong ;

Meunier, Vincent ;

Jung, Yeonwoong ;

Cha, Judy ;

Das, Saptarshi ;

Xiao, Di ;

Son, Youngwoo ;

Strano, Michael S. ;

Cooper, Valentino R. ;

Liang, Liangbo ;

Louie, Steven G. ;

Ringe, Emilie ;

Zhou, Wu ;

Kim, Steve S. ;

Naik, Rajesh R. ;

Sumpter, Bobby G. ;

Terrones, Humberto ;

Xia, Fengnian ;

Wang, Yeliang ;

Zhu, Jun ;

Akinwande, Deji ;

Alem, Nasim ;

Schuller, Jon A. ;

Schaak, Raymond E. ;

Terrones, Mauricio ;

Robinson, Joshua A. .

ACS NANO, 2015, 9 (12) :11509-11539

[3] A Compact Current-Voltage Model for 2D Semiconductor Based Field-Effect Transistors Considering Interface Traps, Mobility Degradation, and Inefficient Doping Effect [J].

Cao, Wei ;

Kang, Jiahao ;

Liu, Wei ;

Banerjee, Kaustav .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (12) :4282-4290

[4]

Chhowalla M, 2016, NAT REV MATER, V1, DOI [10.1038/natrevmats.2016.52, 10.1038/natrevmats2016.52]

[5]

Fang H, 2012, NANO LETT, V12, P3788, DOI [10.1021/nl301702r, 10.1021/nl3040674]

[6] Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors [J].

Jimenez, David .

APPLIED PHYSICS LETTERS, 2012, 101 (24)

[7] High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals [J].

Kim, Sunkook ;

Konar, Aniruddha ;

Hwang, Wan-Sik ;

Lee, Jong Hak ;

Lee, Jiyoul ;

Yang, Jaehyun ;

Jung, Changhoon ;

Kim, Hyoungsub ;

Yoo, Ji-Beom ;

Choi, Jae-Young ;

Jin, Yong Wan ;

Lee, Sang Yoon ;

Jena, Debdeep ;

Choi, Woong ;

Kim, Kinam .

NATURE COMMUNICATIONS, 2012, 3

[8] Effect of high-κ gate dielectrics on charge transport in graphene-based field effect transistors [J].

Konar, Aniruddha ;

Fang, Tian ;

Jena, Debdeep .

PHYSICAL REVIEW B, 2010, 82 (11)

[9]

Lipperheide R., 2014, SPRINGER TRACTS MODE, DOI [10.1007/978-3-319-05924-2_2, DOI 10.1007/978-3-319-05924-2_2]

[10] Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility [J].

Liu, Han ;

Neal, Adam T. ;

Zhu, Zhen ;

Luo, Zhe ;

Xu, Xianfan ;

Tomanek, David ;

Ye, Peide D. .

ACS NANO, 2014, 8 (04) :4033-4041

← 1 2 →