Changes of the thermally oxidized porous silicon conductivity induced by adsorption and electric field

被引：0
|
作者：
Petrov, AA [1 ]
Kozlov, SN [1 ]
Demidovich, GB [1 ]
Demidovich, VM [1 ]
机构：
[1] Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119899, Russia
来源：
PHYSICS OF LOW-DIMENSIONAL STRUCTURES | 1999年 / 7-8卷
关键词：
D O I：
暂无
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Thermal oxidation of porous silicon was demonstrated to reduce drastically the adsorption sensitivity of the porous layer conductivity. Considerable increase of the conductivity of silicon-oxidized porous silicon-metal structures placed in water or ethanol vapor under forward voltage has been observed. The effect was attributed to the modulation of conductivity of non-oxidized cores of porous silicon wires by the mobile ion charge drifting along the oxide surfaces.
引用
收藏
页码：1 / 7
页数：7
相关论文
共 50 条
  • [1] Tunneling conductivity in thermally oxidized porous silicon
    Yarkin, DG
    Balagurov, LA
    Orlov, AF
    Zvyagin, IP
    OPTOELECTRONICS OF GROUP-IV-BASED MATERIALS, 2003, 770 : 37 - 42
  • [2] Protein adsorption in thermally oxidized porous silicon layers
    Zangooie, S
    Bjorklund, R
    Arwin, H
    THIN SOLID FILMS, 1998, 313 : 825 - 830
  • [3] Protein adsorption in thermally oxidized porous silicon layers
    Zangooie, S.
    Bjorklund, R.
    Arwin, h.
    Thin Solid Films, 1998, 313-314 (1-2): : 825 - 830
  • [4] Adsorption-controllable channel conductivity in oxidized porous silicon
    Demidovich, VM
    Demidovich, GB
    Kozlov, SN
    Petrov, AA
    TECHNICAL PHYSICS LETTERS, 1998, 24 (01) : 53 - 54
  • [5] Adsorption-controllable channel conductivity in oxidized porous silicon
    V. M. Demidovich
    G. B. Demidovich
    S. N. Kozlov
    A. A. Petrov
    Technical Physics Letters, 1998, 24 : 53 - 54
  • [6] Changes of thermal Conductivity, Optical Conductivity, and Electric Conductivity of Porous Silicon With Porosity
    Alfeel, Faten
    Awad, Fowzi
    Qamar, Fadi
    JOURNAL OF NEW TECHNOLOGY AND MATERIALS, 2013, 3 (01) : 56 - 60
  • [7] Transport properties of thermally oxidized porous silicon
    Grigor'ev, L. V.
    Grigor'ev, I. M.
    Zamoryanskaya, M. V.
    Sokolov, V. I.
    Sorokin, L. M.
    TECHNICAL PHYSICS LETTERS, 2006, 32 (09) : 750 - 753
  • [8] Luminescence from thermally oxidized porous silicon
    Shiba, Kazutoshi
    Sakamoto, Kunihide
    Miyazaki, Seiichi
    Hirose, Masataka
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1993, 32 (6 A): : 2722 - 2724
  • [9] LUMINESCENCE FROM THERMALLY OXIDIZED POROUS SILICON
    SHIBA, K
    SAKAMOTO, K
    MIYAZAKI, S
    HIROSE, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (6A): : 2722 - 2724
  • [10] Electrical properties of thermally oxidized porous silicon
    Wu, ZY
    Hall, S
    Keen, JM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1996, 143 (09) : 2972 - 2980
12345