Visible luminescence of erbium oxide layers grown on crystalline and amorphous silicon

被引：19

作者：

Nogales, E ^{[1
]}

Méndez, B

Piqueras, J

Plugaru, R

Coraci, A

García, JA

机构：

[1] Univ Complutense, Fac Fis, Dept Fis Mat, E-28040 Madrid, Spain

[2] Inst Microtechnol, Bucharest 72996, Romania

[3] Fac Ciencias, Dept Fis Aplicada 2, Bilbao 48080, Spain

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2002年 / 35卷 / 04期

关键词：

D O I：

10.1088/0022-3727/35/4/303

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Visible luminescence from erbium oxide layers grown on crystalline and amorphous silicon (c-Si and a-Si) has been investigated. The results show strong red and green cathodoluminescence bands due to intraionic Er3+ radiative transitions at room temperature. The use of c-Si or a-Si as substrate led to a red or green dominant emission, respectively, which has been explained in terms of the oxygen content in the substrate. The results obtained from samples grown in different atmospheres also support this assumption.

引用

页码：295 / 298

页数：4

共 20 条

[1] COFFA S, 1996, MRS S P, V422
[2] ERBIUM IN CRYSTAL SILICON - SEGREGATION AND TRAPPING DURING SOLID-PHASE EPITAXY OF AMORPHOUS-SILICON
CUSTER, JS
POLMAN, A
VANPINXTEREN, HM
[J]. JOURNAL OF APPLIED PHYSICS, 1994, 75 (06) : 2809 - 2817
[3] ERBIUM LUMINESCENCE IN POROUS SILICON DOPED FROM SPIN-ON FILMS
DOROFEEV, AM
GAPONENKO, NV
BONDARENKO, VP
BACHILO, EE
KAZUCHITS, NM
LESHOK, AA
TROYANOVA, GN
VOROSOV, NN
BORISENKO, VE
GNASER, H
BOCK, W
BECKER, P
OECHSNER, H
[J]. JOURNAL OF APPLIED PHYSICS, 1995, 77 (06) : 2679 - 2683
[4] 1.54-MU-M LUMINESCENCE OF ERBIUM-IMPLANTED III-V SEMICONDUCTORS AND SILICON
ENNEN, H
SCHNEIDER, J
POMRENKE, G
AXMANN, A
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (10) : 943 - 945
[5] Excitation and temperature quenching of Er-induced luminescence in a-Si:H(Er)
Fuhs, W
Ulber, I
Weiser, G
Bresler, MS
Gusev, OB
Kuznetsov, AN
Kudoyarova, VK
Terukov, EI
Yassievich, IN
[J]. PHYSICAL REVIEW B, 1997, 56 (15): : 9545 - 9551
[6] Low-voltage GaN:Er green electroluminescent devices
Heikenfeld, J
Lee, DS
Garter, M
Birkhahn, R
Steckl, AJ
[J]. APPLIED PHYSICS LETTERS, 2000, 76 (11) : 1365 - 1367
[7] Infrared to visible up-conversion study for erbium-doped zinc tellurite glasses
Jaba, N
Kanoun, A
Mejri, H
Selmi, A
Alaya, S
Maaref, H
[J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2000, 12 (20) : 4523 - 4534
[8] Resonant excitation of visible photoluminescence from an erbium-oxide overlayer on Si
Kasuya, A
Suezawa, M
[J]. APPLIED PHYSICS LETTERS, 1997, 71 (19) : 2728 - 2730
[9] Visible cathodoluminescence of GaN doped with Dy, Er, and Tm
Lozykowski, HJ
Jadwisienczak, WM
Brown, I
[J]. APPLIED PHYSICS LETTERS, 1999, 74 (08) : 1129 - 1131
[10] Local environment of erbium atoms in amorphous hydrogenated silicon
Masterov, VF
Nasredinov, FS
Seregin, PP
Kudoyarova, VK
Kuznetsov, AN
Terukov, EI
[J]. APPLIED PHYSICS LETTERS, 1998, 72 (06) : 728 - 730

← 1 2 →