Microscopic modeling of fluctuations in polar semiconductors with high density electron gas

被引:0
作者
Ramonas, Mindaugas [1 ]
机构
[1] Ctr Phys Sci & Technol, Semicond Phys Inst, LT-01108 Vilnius, Lithuania
来源
2017 INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF) | 2017年
关键词
Monte Carlo method; Langevin-Boltzmann equation; hot electrons; hot phonons; Pauli exclusion principle; noise temperature; DETERMINISTIC APPROACH; BOLTZMANN-EQUATION; PHONON SYSTEM; MONTE-CARLO; NOISE; GAAS;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Numerical methods for microscopic modeling of electronic fluctuations are considered. A deterministic Boltzmann-Langevin method for simulation of the long-lasting correlations is proposed for a coupled hot-electron-hot-phonon gas in a polar semiconductor. The effects of the nonequilibrium phonons and the Pauli exclusion principle on spectra of the hot-electron noise temperature are demonstrated.
引用
收藏
页数:4
相关论文
共 50 条
  • [41] Finite element and Monte Carlo modeling of the electrical and thermal properties of high areal density MR read-back heads
    Dimitrov, DV
    Subramanian, K
    Phinney, D
    Gangopadhyay, S
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2000, 222 (03) : 347 - 354
  • [42] Study of Selective Etching of GaAs over A1GaAs and InGaP Semiconductors in High Density Planar Inductively Coupled BCl3/SF6 Plasmas
    Yoo, Seungryul
    Ryu, Hyunwoo
    Lim, Wantae
    Lee, Jewon
    Cho, Guan Sik
    Jeon, Minhyon
    Song, Hanjung
    Lee, BongJu
    Ko, Jong Soo
    Go, Jeung Sang
    Pearton, S. J.
    KOREAN JOURNAL OF MATERIALS RESEARCH, 2005, 15 (03): : 161 - 165
  • [43] Secondary radiation dose modeling in passive scattering and pencil beam scanning very high energy electron (VHEE) radiation therapy
    Deut, Umberto
    Ronga, Maria Grazia
    Bonfrate, Anthony
    De Marzi, Ludovic
    MEDICAL PHYSICS, 2023, 50 (07) : 4491 - 4504
  • [44] MODELING THE HOTSPOT TEMPERATURE IN AlGaN/GaN HIGH ELECTRON MOBILITY TRANSISTORS USING A NON-GRAY PHONON BTE SOLVER
    Donmezer, Fatma Nazli
    Islam, Munmun
    Graham, Samuel
    Yoder, Douglas
    INTERNATIONAL MECHANICAL ENGINEERING CONGRESS AND EXPOSITION - 2012, VOL 9, PTS A AND B, 2013, : 1175 - 1188
  • [45] Correlation of III/V semiconductor etch results with physical parameters of high-density reactive plasmas excited by electron cyclotron resonance
    Franz, Gerhard
    Meyer, Ralf
    Amann, Markus-Christian
    PLASMA SCIENCE & TECHNOLOGY, 2017, 19 (12)
  • [46] Effects of high photon gas density and radiative efficiency on upper bounds of energy conversion efficiency in single-crystal solar cells
    Babcock, Sean J.
    Irvin, Nicholas P.
    Chen, Eric Y.
    Honsberg, Christiana B.
    King, Richard R.
    2019 IEEE 46TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2019, : 3195 - 3197
  • [47] N-polar GaN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor formed on sapphire substrate with minimal step bunching
    Prasertsuk, Kiattiwut
    Tanikawa, Tomoyuki
    Kimura, Takeshi
    Kuboya, Shigeyuki
    Suemitsu, Tetsuya
    Matsuoka, Takashi
    APPLIED PHYSICS EXPRESS, 2018, 11 (01)
  • [48] THz Mixing with High-TC Hot Electron Bolometers: A Performance Modeling Assessment for Y-Ba-Cu-O Devices
    Ladret, Romain
    Degardin, Annick
    Jagtap, Vishal
    Kreisler, Alain
    PHOTONICS, 2019, 6 (01)
  • [49] Grafting of Cobaltic Protoporphyrin IX on Semiconductors toward Sensing Devices: Vibrational and Electronic High-Resolution Electron Energy Loss Spectroscopy and X-ray Photoelectron Spectroscopy Study
    Botelho do Rego, A. M.
    Ferraria, A. M.
    Vilar, M. Rei
    JOURNAL OF PHYSICAL CHEMISTRY C, 2013, 117 (43) : 22298 - 22306
  • [50] Short-separation regression incorporated diffuse optical tomography image reconstruction modeling for high-density functional near-infrared spectroscopy
    Gao, Yuanyuan
    Rogers, De'Ja
    von Luhmann, Alexander
    Ortega-Martinez, Antonio
    Boas, David A.
    Yucel, Meryem Ayse
    NEUROPHOTONICS, 2023, 10 (02)