Properties of a Fe/GaAs(001) hybrid structure grown by molecular-beam epitaxy

被引:38
作者
Chye, Y [1 ]
Huard, V
White, ME
Petroff, PM
机构
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
关键词
D O I
10.1063/1.1434302
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on the epitaxy of Fe thin films on GaAs(001) using molecular-beam epitaxy with two different growth methods aimed at suppressing Fe and GaAs interdiffusion. These methods make use of low-temperature deposition at -150degreesC and/or of an ultrathin Al interlayer, respectively. Good-quality single-crystal Fe films were obtained. The magnetic properties of the Fe films show square hysteresis loops and clear in-plane magnetic anisotropy with well-defined easy hard axes. The photoluminescence of an Al0.3Ga0.7As/GaAs quantum well in close proximity to the Fe film is measured in order to examine the quality of the Fe/GaAs interface. (C) 2002 American Institute of Physics.
引用
收藏
页码:449 / 451
页数:3
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