Mg diffusion and activation along threading dislocations in GaN

被引：19

作者：

Yi, Wei ^{[1
]}

Kumar, Ashutosh ^{[1
]}

Uzuhashi, Jun ^{[1
]}

Kimura, Takashi ^{[1
]}

Tanaka, Ryo ^{[2
]}

Takashima, Shinya ^{[2
]}

Edo, Masaharu ^{[2
]}

Yao, Yongzhao ^{[3
]}

Ishikawa, Yukari ^{[3
]}

Chen, Jun ^{[1
]}

Ohkubo, Tadakatsu ^{[1
]}

Sekiguchi, Takashi ^{[1
,4
]}

Hono, Kazuhiro ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

[2] Fuji Elect Co Ltd, Adv Technol Lab, Hino, Tokyo 1918502, Japan

[3] Japan Fine Ceram Ctr, 2-4-1 Mutsuno, Nagoya, Aichi 4568587, Japan

[4] Univ Tsukuba, Tsukuba, Ibaraki 3058577, Japan

来源：

APPLIED PHYSICS LETTERS | 2020年 / 116卷 / 24期

关键词：

ION-IMPLANTED GAN; SCREW DISLOCATIONS;

D O I：

10.1063/5.0009596

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The precise control of p-GaN is a crucial issue for developing GaN-based power devices. Mg as an acceptor is commonly used in p-type doping; however, the Mg diffusion through threading dislocations (TDs) has not been well addressed. To clarify the Mg diffusion and activation along TDs, we have performed a systematic characterization of a Mg-implanted homoepitaxial GaN layer grown on a freestanding substrate. Active-Mg related donor-acceptor pair (DAP) emission from certain TDs is identified by cathodoluminescence (CL). Dislocations with and without DAP emission are investigated structurally and compositionally based on etch pits, transmission electron microscopy, and atom-probe tomography. Direct evidence of Mg distribution around edge- and mixed-type TDs is obtained. There exists a significant difference in the Mg concentration and incorporation states between different types of TDs.

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页数：5

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