Bond formation in ion beam synthesised amorphous gallium nitride

被引：12
作者：
Almeida, SA
Silva, SRP [1 ]
Sealy, BJ
Watts, JF
机构：
[1] Univ Surrey, Sch Mech & Mat Engn, Guildford GU2 5XH, Surrey, England
[2] Univ Surrey, Sch Elect Engn Informat Technol & Math, Guildford GU2 5XH, Surrey, England
来源：
THIN SOLID FILMS | 1999年 / 343卷
关键词：
amorphous materials; infrared spectroscopy; Fourier transform infrared spectroscopy (FTIR); X-ray photoelectron spectroscopy (XPS); GaN;
D O I：
10.1016/S0040-6090(98)01696-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A combination of ion implantation and plasma enhanced chemical vapour deposition (PECVD) has been used to synthesise amorphous gallium nitride (a-GaN). This was achieved by implanting PECVD amorphous silicon nitride (a-SiN(x):H) films with 75 keV Ga(+) ions at room temperature. A study of an entire range of a-SiN(x):H films with different compositions has enabled the choice of an optimum composition of the substrate for Ga implants. An FTIR study reveals the presence of GaN bond vibrations in the N rich samples. This complements the X-ray photoelectron spectroscopy results that confirm the presence of GaN bonds in samples. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：632 / 636
页数：5
相关论文
共 16 条
[1]   Stoichiometric limitations of RF plasma deposited amorphous silicon-nitrogen alloys [J].
Almeida, SA ;
Silva, SRP .
THIN SOLID FILMS, 1997, 311 (1-2) :133-137
[2]   Ion-beam synthesis of amorphous gallium nitride [J].
Almeida, SA ;
Silva, SRP ;
Sealy, BJ ;
Watts, JF .
PHILOSOPHICAL MAGAZINE LETTERS, 1998, 78 (04) :319-324
[3]  
BARRADS NP, 1998, UNPUB 11 INT C ION B
[4]   Hydrogenated amorphous silicon-nitrogen alloys, a-SiNx:H-y: A wide band gap material for optoelectronic devices [J].
Demichelis, F ;
Crovini, G ;
Giorgis, F ;
Pirri, CF ;
Tresso, E .
JOURNAL OF APPLIED PHYSICS, 1996, 79 (03) :1730-1735
[5]   Compositional and structural analysis of hydrogenated amorphous silicon-nitrogen alloys prepared by plasma-enhanced chemical vapour deposition [J].
Demichelis, F ;
Giorgis, F ;
Pirri, CF .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1996, 74 (02) :155-168
[6]   OPTICAL PHONONS OF HEXAGONAL AND CUBIC GAN STUDIED BY INFRARED TRANSMISSION AND RAMAN-SPECTROSCOPY [J].
GIEHLER, M ;
RAMSTEINER, M ;
BRANDT, O ;
YANG, H ;
PLOOG, KH .
APPLIED PHYSICS LETTERS, 1995, 67 (06) :733-735
[7]   REACTIVE SPUTTERING OF GALLIUM NITRIDE THIN-FILMS FOR GAAS MIS STRUCTURES [J].
HARIU, T ;
USUBA, T ;
ADACHI, H ;
SHIBATA, Y .
APPLIED PHYSICS LETTERS, 1978, 32 (04) :252-253
[8]   AMORPHOUS SIN-H DIELECTRICS WITH LOW-DENSITY OF DEFECTS [J].
HASEGAWA, S ;
MATUURA, M ;
KURATA, Y .
APPLIED PHYSICS LETTERS, 1986, 49 (19) :1272-1274
[9]   BONDING AND ELECTRICAL-PROPERTIES OF BORON-DOPED MICROCRYSTALLINE SINX-H FILMS [J].
HASEGAWA, S ;
SEGAWA, M ;
KURATA, Y .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (04) :1931-1938
[10]   AMORPHOUS SINX-H FILMS WITH A LOW-DENSITY OF SI-H BONDS [J].
HASEGAWA, S ;
MATUURA, M ;
ANBUTU, H ;
KURATA, Y .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1987, 56 (05) :633-640
12