EVALUATION OF ANODIC TA2O5 AS THE DIELECTRIC LAYER FOR EWOD DEVICES

被引:0
作者
Huang, Lian-Xin [1 ]
Koo, Bonhye [1 ]
Kim, Chang-Jin CJ [1 ]
机构
[1] Univ Calif Los Angeles, Los Angeles, CA 90024 USA
来源
2012 IEEE 25TH INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS (MEMS) | 2012年
关键词
TANTALUM; FILMS;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report that anodic tantalum pentoxide (Ta2O5) exhibits severe polarity and frequency dependencies that, when used as the dielectric material for electrowetting on dielectric (EWOD) devices, in many cases result in long-term performance that is worse than when conventional dielectrics (e.g., SiO2) are used. This rather disappointing news is nevertheless relevant to the community and calls for critical assessment. Here, we find that under direct current (DC) actuation Ta2O5 is attractive for EWOD only if the droplet is negatively biased, and that under alternating current (AC) it is acceptable only for low frequencies.
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页数:4
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